FDC602P Fairchild Semiconductor, FDC602P Datasheet - Page 2
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FDC602P
Manufacturer Part Number
FDC602P
Description
MOSFET P-CH 20V 5.5A SSOT-6
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDC602P.pdf
(5 pages)
Specifications of FDC602P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
35 mOhm @ 5.5A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
5.5A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 4.5V
Input Capacitance (ciss) @ Vds
1456pF @ 10V
Power - Max
800mW
Mounting Type
Surface Mount
Package / Case
6-SSOT, SuperSOT-6
Configuration
Single Quad Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.035 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
19 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
5.5 A
Power Dissipation
1600 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDC602P
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDC602P
Manufacturer:
Fairchild Semiconductor
Quantity:
180 578
Part Number:
FDC602P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDC602P-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Notes:
1. R
2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
Electrical Characteristics
Symbol
Off Characteristics
BV
I
I
I
On Characteristics
V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
DSS
GSSF
GSSR
D(on)
S
a.
b.
d(on)
r
d(off)
f
FS
BV
V
DS(on)
iss
oss
rss
GS(th)
g
gs
gd
SD
JA
DSS
GS(th)
T
T
pins. R
78°C/W when mounted on a 1in
156°C/W when mounted on a minimum pad.
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain
DSS
J
J
JC
is guaranteed by design while R
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Parameter
2
pad of 2oz copper on FR-4 board.
(Note 2)
CA
is determined by the user's board design.
(Note 2)
V
I
V
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
T
D
D
A
GS
DS
GS
GS
DS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
= –250 A, Referenced to 25 C
= –250 A, Referenced to 25 C
= 25°C unless otherwise noted
= 0 V, I
= –16 V, V
= 12 V,
= –12 V, V
= V
= –4.5 V,
= –2.5 V,
= –4.5 V, I
= –4.5 V,
= –5 V,
= –10 V,
= –10 V,
= –4.5 V,
= –10 V,
= –4.5 V
= 0 V, I
Test Conditions
GS
, I
D
D
= –250 A
S
= –250 A
D
= –1.3 A
V
= –5.5AT
I
I
V
I
GS
DS
DS
D
D
D
V
I
I
R
D
D
= –5.5 A
= –4.5 A
GS
GEN
= –5.5 A,
DS
= –5.5 A
= –1 A,
= 0 V
= 0 V
= 0 V
= 0 V,
= –5 V
= 6
J
(Note 2)
=125 C
Min
–0.6
–20
–20
1456
Typ
–0.9
–0.7
–14
300
150
27
38
38
19
15
11
57
37
14
3
3
5
Max Units
–100
–1.5
–1.3
–1.2
100
–1
35
50
53
27
20
91
59
20
FDC602P Rev C(W)
mV/ C
mV/ C
m
nA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
A
S
A
V
A