FDC634P Fairchild Semiconductor, FDC634P Datasheet - Page 4

• Manufacturer Part Number: FDC634P
• Description: MOSFET P-CH 20V 3.5A SSOT-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDC634P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 3.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.5A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 779pF @ 10V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.08 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 11 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 3.5 A
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: -3.5A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 80mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -800mV
• Rohs Compliant: Yes
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.08Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±8V
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SuperSOT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDC634PTR

Typical Characteristics
5
4
3
2
1
0
0.01
100
0.1
0
10
Figure 9. Maximum Safe Operating Area.
1
Figure 7. Gate Charge Characteristics.
0.1
0.001
I
R
D
0.01
DS(ON)
SINGLE PULSE
= -3.5A
R
0.1
0.00001
1
V
JA
1
T
GS
A
= 156
LIMIT
= 2 5
= -10V
D = 0.5
2
o
o
0.2
C
C/W
0.1
0.05
0.02
-V
0.01
D S
3
Q
, DRAIN-SOURCE VOLTAGE (V)
g
, GATE CHARGE (nC)
1
0.0001
SINGLE PULSE
4
DC
1s
Figure 11. Transient Thermal Response Curve.
5
100ms
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
V
DS
10ms
0.001
6
= -5V
10
-15V
1ms
100 s
7
8
-10V
0.01
9
100
t
1
, TIME (sec)
1000
0.1
10
800
600
400
200
8
6
4
2
0
0.01
0
Figure 8. Capacitance Characteristics.
0
C
RSS
Figure 10. Single Pulse Maximum
C
OSS
1
-V
0.1
Power Dissipation.
DS
5
, DRAIN TO SOURCE VOLTAGE (V)
C
ISS
t
1
, TIME (sec)
10
1
10
P(pk)
Duty Cycle, D = t
T
R
J
R
JA
- T
JA
(t) = r(t) + R
A
t
SINGLE PULSE
10
= 156
R
1
100
= P * R
15
t
JA
2
T
A
= 156°C/W
= 25°C
FDC634P Rev E(W)
f = 1 MHz
V
o
C/W
GS
JA
= 0 V
1
(t)
JA
/ t
2
100
20
1000