FDN361BN Fairchild Semiconductor, FDN361BN Datasheet - Page 2

• Manufacturer Part Number: FDN361BN
• Description: MOSFET N-CH 30V 1.4A SSOT3
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDN361BN

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 110 mOhm @ 1.4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.4A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 1.8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 193pF @ 15V
• Power - Max: 460mW
• Mounting Type: Surface Mount
• Package / Case: 3-SSOT, SuperSOT-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.11 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.4 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDN361BNTR

Notes:
1.
Scale 1 : 1 on letter size paper
2.
FDN361BN Rev A1(W)
Electrical Characteristics
Symbol
Off Characteristics
BV
'BV
I
I
On Characteristics
V
R
I
g
Dynamic Characteristics
C
C
C
R
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics
V
t
Q
DSS
GSS
D(on)
d(on)
r
d(off)
f
rr
FS
GS(th)
SD
'T
DS(on)
iss
oss
rss
G
g
gs
gd
rr
R
the drain pins. R
Pulse Test: Pulse Width d 300 Ps, Duty Cycle d 2.0%
DSS
TJA
DSS
J
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
Gate Threshold Voltage
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
TJC
is guaranteed by design while R
a) 250qC/W when mounted on a
0.02 in
Parameter
2
pad of 2 oz. copper.
(Note 2)
(Note 2)
TCA
is determined by the user's board design.
T
V
I
V
V
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
V
I
A
D
F
= 25°C unless otherwise noted
GS
DS
DS
GS
DS
GS
GS
GS
GS
DS
DS
GS
DD
GS
DS
GS
GS
= 1.4 A,
= 250 PA,Referenced to 25qC
= 10 V, I
= 0 V,
= 24 V,
= 24 V, V
= r20 V,
= V
= 10 V,
= 4.5 V,
= 4.5 V,
= 5 V,
= 15 V,
= 15 mV,
= 15 V,
= 10 V,
= 15 V,
= 4.5 V
= 0 V,
Test Conditions
GS
,
D
I
b) 270°C/W when mounted on a
GS
S
= 1.4 A, T
d
= 0.42 A
iF
minimum pad.
= 0 V, T
/d
I
V
V
I
I
I
V
I
V
f = 1.0 MHz
I
R
I
D
D
D
D
D
D
D
GS
DS
DS
GEN
t
GS
= 250 PA
= 250 PA
= 1.4 A
= 1.2 A
= 1.4 A
= 1 A,
= 1.4 A,
= 100 A/µs
= 0 V
= 5 V
= 0 V
= 0 V,
= 6 :
J
J
= 125qC
= 55qC
(Note 2)
Min
3.5
30
1
Typ Max Units
120
114
145
2.1
1.6
1.3
0.5
0.5
0.8
26
92
35
15
16
11
4
3
8
2
4
r100
110
160
150
193
www.fairchildsemi.com
1.8
1.2
10
47
23
16
29
22
1
3
6
4
mV/qC
m:
nC
nC
nC
nC
PA
PA
nA
pF
pF
pF
nS
ns
ns
ns
ns
:
V
V
A
S
V