SI1305DL-T1-E3 Vishay, SI1305DL-T1-E3 Datasheet - Page 8

• Manufacturer Part Number: SI1305DL-T1-E3
• Description: MOSFET P-CH 8V 860MA SOT323-3
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1305DL-T1-E3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 280 mOhm @ 1A, 4.5V
• Drain To Source Voltage (vdss): 8V
• Current - Continuous Drain (id) @ 25° C: 860mA
• Vgs(th) (max) @ Id: 450mV @ 250µA
• Gate Charge (qg) @ Vgs: 4nC @ 4.5V
• Power - Max: 290mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -920mA
• Drain Source Voltage Vds: -8V
• On Resistance Rds(on): 280mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -450mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI1305DL-T1-E3TR

RECOMMENDED MINIMUM PADS FOR SC-70: 3-Lead
Document Number: 72601
Revision: 21-Jan-08
Return to Index
Return to Index
(0.622)
Recommended Minimum Pads
0.025
Dimensions in Inches/(mm)
(0.686)
(1.803)
0.027
0.071
(0.559)
0.022
Application Note 826
Vishay Siliconix
www.vishay.com
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