SI1305DL-T1-E3 Vishay, SI1305DL-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI1305DL-T1-E3
• Description: MOSFET P-CH 8V 860MA SOT323-3
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1305DL-T1-E3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 280 mOhm @ 1A, 4.5V
• Drain To Source Voltage (vdss): 8V
• Current - Continuous Drain (id) @ 25° C: 860mA
• Vgs(th) (max) @ Id: 450mV @ 250µA
• Gate Charge (qg) @ Vgs: 4nC @ 4.5V
• Power - Max: 290mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -920mA
• Drain Source Voltage Vds: -8V
• On Resistance Rds(on): 280mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -450mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI1305DL-T1-E3TR

Si1305DL
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71076.
www.vishay.com
4
- 0.1
- 0.2
0.4
0.3
0.2
0.1
0.0
0.01
- 50
0.01
0.1
0.1
2
1
2
1
10
10
- 25
-4
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0
Threshold Voltage
T
J -
25
Temperature (°C)
10
-3
Single Pulse
I
D
50
= 250 µA
10
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Ambient
-3
75
Normalized Thermal Transient Impedance, Junction-to-Foot
100
10
-2
125
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
150
10
-2
10
-1
20
16
12
10
8
4
0
1
10
-1
-3
10
-2
Single Pulse Power
1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
0
P
-1
DM
Time (s)
JM
− T
T
1
t
S10-0110-Rev. F, 18-Jan-10
1
A
A
= P
Document Number: 71076
= 25 °C
1
t
2
DM
Z
thJA
100
thJA
t
t
1
2
10
(t)
= 360 °C/W
100
6
1
0
0
0
600