ZXM61P03FTA Diodes Zetex, ZXM61P03FTA Datasheet - Page 6

• Manufacturer Part Number: ZXM61P03FTA
• Description: MOSFET P-CH 30V 1.1A SOT23-3
• Manufacturer: Diodes Zetex
• Type: Small Signalr

Specifications of ZXM61P03FTA

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 350 mOhm @ 600mA, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.1A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 4.8nC @ 10V
• Input Capacitance (ciss) @ Vds: 140pF @ 25V
• Power - Max: 625mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.55Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 1.1A
• Power Dissipation: 806mW
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXM61P03FTR

ISSUE 1 - OCTOBER 2005
V
G
300
250
200
150
100
Q
50
Capacitance v Drain-Source Voltage
0
GS
Basic gate charge waveform
0.1
Switching time waveforms
t
r
t
(on)
-V
t
d(off)
DS
- Drain Source Voltage (V)
Q
Q
G
GD
1
Charge
t
r
t
(on)
TYPICAL CHARACTERISTICS
10
t
d(on)
Ciss
Coss
f=1MHz
Crss
Vgs=0V
100
90%
10%
V
V
DS
GS
6
14
12
10
Switching time test circuit
8
6
4
2
0
Gate-Source Voltage v Gate Charge
Gate charge test circuit
0
ID=-0.6A
12V
0.5
R
G
1
1.5
Q -Charge (nC)
VDS=-24V
VDS=-15V
V
regulator
Current
GS
50k
I
G
2
V
GS
ZXM61P03F
2.5
R
S E M I C O N D U C T O R S
Same as
D.U.T
D
D.U.T
3
V
3.5
DS
4
I
V
D
DS
4.5
V
CC