DMN2027LK3-13 Diodes Zetex, DMN2027LK3-13 Datasheet - Page 5

• Manufacturer Part Number: DMN2027LK3-13
• Description: MOSFET N-CH 20V 11.6A DPAK
• Manufacturer: Diodes Zetex

Specifications of DMN2027LK3-13

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 21 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 11.6A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 9.1nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 857pF @ 10V
• Power - Max: 2.14W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DMN2027LK3-13DITR

Typical Characteristics
DMN2027LK3
Document Revision: 1
1E-3
0.01
0.01
Typical Transfer Characteristics
0.01
0.1
0.1
0.1
On-Resistance v Drain Current
10
10
10
1
1
1
0.1
T = 25°C
1.5V
T = 25°C
V
0.1
DS
V
T = 150°C
V
= 10V
DS
GS
Output Characteristics
Drain-Source Voltage (V)
1
Gate-Source Voltage (V)
I
D
10V
Drain Current (A)
1
3V
1
T = 25°C
2V
10
2
2.5V
2.5V
3V
2V
10
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4.5V
10V
1.5V
V
V
GS
GS
5 of 8
Normalised Curves v Temperature
Source-Drain Diode Forward Voltage
1E-3
0.01
0.01
0.1
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.1
10
10
1
1
-50
0.2
T = 150°C
0.1
V
V
Tj Junction Temperature (°C)
T = 150°C
DS
SD
Output Characteristics
0.4
Drain-Source Voltage (V)
0
Source-Drain Voltage (V)
Diodes Incorporated
10V
V
I
D
A Product Line of
GS
= 250uA
1
0.6
= V
50
V
I
D
DS
GS
= 20A
2.5V
= 10V
T = 25°C
Vgs = 0V
100
0.8
2V
10
R
V
DS(on)
GS(th)
1.5V
1V
V
DMN2027LK3
GS
150
1.0
© Diodes Incorporated
July 2009