DMN3020LK3-13 Diodes Zetex, DMN3020LK3-13 Datasheet - Page 4

• Manufacturer Part Number: DMN3020LK3-13
• Description: MOSFET N-CH 30V 11.3A DPAK
• Manufacturer: Diodes Zetex

Specifications of DMN3020LK3-13

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 11.3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 6.3nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 608pF @ 15V
• Power - Max: 2.17W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DMN3020LK3-13DITR

Electrical Characteristics
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 7)
Forward Transconductance (Notes 7 & 8)
Diode Forward Voltage (Note 7)
Reverse recovery time (Note 8)
Reverse recovery charge (Note 8)
DYNAMIC CHARACTERISTICS (
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time (Note 9)
Turn-On Rise Time (Note 9)
Turn-Off Delay Time (Note 9)
Turn-Off Fall Time (Note 9)
Notes:
DMN3020LK3
Document Revision: 2
7. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
8. For design aid only, not subject to production testing.
9. Switching characteristics are independent of operating junction temperatures.
Characteristic
Note 8
@T
)
A
= 25°C unless otherwise specified
Symbol
R
BV
V
DS (ON)
t
t
I
I
C
V
C
C
GS(th)
Q
Q
D(on)
D(off)
DSS
GSS
Q
Q
Q
g
t
oss
t
t
SD
rss
DSS
rr
iss
fs
gs
gd
r
f
rr
g
g
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Min
4 of 8
1.0
30
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16.5
0.82
12.9
Typ
608
132
4.8
6.3
2.5
2.5
2.9
3.3
12
71
16
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8
0.020
0.034
±100
Max
0.5
3.0
1.2
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Diodes Incorporated
A Product Line of
Unit
μA
nA
nC
nC
nC
nC
nC
ns
pF
pF
pF
ns
ns
ns
ns
Ω
V
V
S
V
I
V
V
I
V
V
V
I
I
V
f= 1MHz
V
I
V
I
V
I
D
D
S
S
D
D
D
DS
GS
GS
GS
DS
DS
DS
DS
DD
= 250μA, V
= 1.7A, V
= 2.2A, di/dt= 100A/μs
= 7A
= 7A
= 1A, R
= 250μA, V
= 30V, V
= 15V, I
= 15V, V
= 15V, V
= 15V, V
= 15V, V
= ±20V, V
= 10V, I
= 4.5V, I
Test Condition
G
DMN3020LK3
GS
≅ 6.0Ω
D
D
D
GS
GS
GS
GS
GS
= 7.0A
= 7.1A
DS
GS
= 6.0A
= 0V
DS
= 0V
= 0V
= 4.5V
= 10V
= 10V
= V
= 0V
= 0V
© Diodes Incorporated
GS
July 2009