DMN4009LK3-13 Diodes Zetex, DMN4009LK3-13 Datasheet - Page 2

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DMN4009LK3-13

Manufacturer Part Number
DMN4009LK3-13
Description
MOSFET N-CH 40V 18A DPAK
Manufacturer
Diodes Zetex
Datasheet

Specifications of DMN4009LK3-13

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8.5 mOhm @ 14A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
21nC @ 4.5V
Input Capacitance (ciss) @ Vds
2072pF @ 20V
Power - Max
2.19W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
DMN4009LK3-13DITR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DMN4009LK3-13
Manufacturer:
DIODES/美台
Quantity:
20 000
Thermal Characteristics
Maximum Ratings
Drain-Source voltage
Gate-Source voltage
Continuous Drain current
Pulsed Drain current
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
Power dissipation
Linear derating factor
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and storage temperature range
Notes:
DMN4009LK3
Document Revision: 1
2. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
3. Same as note 2, except the device is measured at t ≤ 10 sec.
4. Same as note 2, except the device is pulsed with D = 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.
5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
6. Thermal resistance from junction to solder-point (at the end of the drain lead).
measured when operating in a steady-state condition.
measured when operating in a steady-state condition.
Characteristic
Characteristic
@T
V
V
GS
GS
A
= 10V
= 25°C unless otherwise specified
= 10V
@T
A
= 25°C unless otherwise specified
(Note 3)
T
(Note 2)
(Note 4)
(Note 3)
(Note 4)
(Note 2)
(Note 3)
(Note 5)
(Note 2)
(Note 3)
(Note 5)
(Note 6)
A
=70°C (Note 3)
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Symbol
Symbol
T
J
V
R
R
V
, T
I
I
P
DSS
I
DM
I
SM
θ JA
GS
θ JL
D
S
D
STG
Diodes Incorporated
-55 to 150
A Product Line of
Value
Value
27.6
22.1
18.0
96.6
13.2
96.6
4.36
34.8
10.3
82.4
2.19
17.5
28.6
12.1
57.0
0.85
±20
40
DMN4009LK3
mW/°C
°C/W
© Diodes Incorporated
Unit
Unit
°C
W
V
V
A
A
A
A
July 2009

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