DMN6068LK3-13 Diodes Zetex, DMN6068LK3-13 Datasheet - Page 2

• Manufacturer Part Number: DMN6068LK3-13
• Description: MOSFET N-CH 60V 6A DPAK
• Manufacturer: Diodes Zetex

Specifications of DMN6068LK3-13

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 68 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 10.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 502pF @ 30V
• Power - Max: 2.12W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DMN6068LK3-13DITR

Thermal Characteristics
Maximum Ratings
Drain-Source voltage
Gate-Source voltage
Single Pulsed Avalanche Energy
Single Pulsed Avalanche Current
Continuous Drain current
Pulsed Drain current
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
Power dissipation
Linear derating factor
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and storage temperature range
Notes:
DMN6068LK3
Document Number DS32057 Rev 2 - 2
2. AEC-Q101 V
3. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
4. Same as note 2, except the device is measured at t ≤ 10 sec.
5. Same as note 2, except the device is pulsed with D = 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.
6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
7. Thermal resistance from junction to solder-point (at the end of the drain lead).
8. UIS in production with L = 3.0mH, I
measured when operating in a steady-state condition.
measured when operating in a steady-state condition.
Characteristic
GS
Characteristic
maximum is ±16V.
@T
V
V
GS
GS
A
= 10V
= 25°C unless otherwise specified
= 10V
@T
A
AS
= 25°C unless otherwise specified
(Note 3)
(Note 4)
(Note 6)
(Note 3)
(Note 4)
(Note 6)
(Note 7)
(Note 2)
(Note 8)
(Note 8)
(Note 4)
T
(Note 3)
(Note 5)
(Note 4)
(Note 5)
= 5.0A, R
A
= 70°C (Note 4)
G
= 25Ω, V
DD
www.diodes.com
= 50V, starting T
2 of 9
Symbol
T
Symbol
J
V
R
R
, T
V
E
I
P
I
I
DSS
I
DM
SM
θ JA
AS
I
θ JL
GS
AS
D
S
D
STG
J
= 25°C
Diodes Incorporated
-55 to 150
A Product Line of
Value
Value
37.5
22.2
10.2
22.2
4.12
8.49
67.9
2.12
16.9
30.3
14.7
59.0
3.09
±20
5.0
8.5
6.8
6.0
60
33
DMN6068LK3
mW/°C
°C/W
© Diodes Incorporated
Unit
Unit
mJ
°C
W
V
V
A
A
A
A
A
January 2010