FDFS2P102A Fairchild Semiconductor, FDFS2P102A Datasheet
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FDFS2P102A
Specifications of FDFS2P102A
FDFS2P102A_NL
FDFS2P102A_NLTR
FDFS2P102A_NLTR
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Related parts for FDFS2P102A
FDFS2P102A Summary of contents
Page 1
... Reel Size 13’’ August 2001 = 125 mΩ –10 V DS(ON 200 mΩ –4.5 V DS(ON 125° Ratings Units – ±20 V – A 3.3 – 1.6 1 0.9 – ° +150 Tape width Quantity 12mm 2500 units FDFS2P102A Rev A1(W) ...
Page 2
... 125°C J Typ Max Units V –23 mV/°C –1 µA 100 nA –100 nA –1 –1.8 –3 V 4.4 mV/°C 96 125 mΩ 152 200 137 190 A 4.6 S 182 2.1 3.0 nC 1.0 nC 0.6 nC –1.3 A –0.8 –1 µ 0.47 V 0.39 0.58 0.53 FDFS2P102A Rev A1(W) ...
Page 3
... Scale letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% (Note 1a) (Note 1) is determined by the user's board design. θCA b) 125°C/W when mounted 0.02 in pad copper 78 °C/W 40 °C/W c) 135°C/W when mounted on a minimum pad. FDFS2P102A Rev A1(W) ...
Page 4
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. -4.5V -5.0V -6.0V -7.0V -10V DRAIN CURRENT ( -1. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDFS2P102A Rev A1(W) 10 1.4 ...
Page 5
... C 1.0E-05 1.0E-06 1.0E-07 0.6 0.7 0.8 0 Figure 10. Schottky Diode Reverse Current. 0 TIME (sec 1MHz ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE ( 125 REVERSE VOLTAGE ( ( θJA θ 135 °C/W θJA P(pk ( θJA Duty Cycle 100 1000 FDFS2P102A Rev A1(W) ...
Page 6
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ GTO™ DenseTrench™ ...