SI1488DH-T1-E3 Vishay, SI1488DH-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI1488DH-T1-E3
• Description: MOSFET N-CH 20V 6.1A SC70-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1488DH-T1-E3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 49 mOhm @ 4.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6.1A
• Vgs(th) (max) @ Id: 950mV @ 250µA
• Gate Charge (qg) @ Vgs: 0.01nC @ 5V
• Input Capacitance (ciss) @ Vds: 530pF @ 10V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 6.1A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 65mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: 950mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI1488DH-T1-E3TR

Si1488DH
Vishay Siliconix
TYPICAL CHARACTERISTICS T
www.vishay.com
4
0.001
0.01
0.1
10
20
1.0
0.8
0.6
0.4
0.2
0.0
1
- 50
0.0
T
Source-Drain Diode Forward Voltage
- 25
J
0.2
= 150 °C
V
SD
0
- Source-to-Drain Voltage (V)
0.4
Threshold Voltage
T
J
25
- Temperature (°C)
I
D
0.6
50
= 250 µA
T
75
J
0.8
0.001
A
0.01
= 25 °C
100
0.1
= 25 °C, unless otherwise noted
10
1
0.1
100
* V
Safe Operating Area, Junction-to-Ambient
1.0
Limited by R
GS
125
Single Pulse
T
A
> minimum V
V
= 25 ° C
DS
1.2
150
- Drain-to-Source Voltage (V)
DS(on)
1
*
GS
BVDSS Limited
at which R
10
DS(on)
0.12
0.09
0.06
0.03
0.00
30
25
20
15
10
0.001
5
0
is specified
0
1 ms
100 ms
1 s
10 s
10 ms
DC
0.01
R
DS(on)
100
1
V
GS
Single Pulse Power
- Gate-to-Source Voltage (V)
vs. V
0.1
T
A
= 25 ° C
2
Time (s)
GS
S10-0792-Rev. D, 05-Apr-10
vs. Temperature
Document Number: 73788
1
3
10
T
I
A
D
4
= 125 ° C
= 4.6 A
100
600
5