FDMA420NZ Fairchild Semiconductor, FDMA420NZ Datasheet - Page 2

• Manufacturer Part Number: FDMA420NZ
• Description: MOSFET N-CH 20V 5.7A MICROFET
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDMA420NZ

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 5.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.7A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 935pF @ 10V
• Power - Max: 2.4W
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, 6-MicroFET™
• Configuration: Single Quad Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.03 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 5.7 A
• Power Dissipation: 900 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.03Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±12V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: MicroFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMA420NZTR

FDMA420NZ Rev B4
Notes:
1. R
drain pins.
2. Pulse Test: Pulse Width < 300 Ps, Duty Cycle < 2.0%.
3. The diode connected between the gate and the source serves only as proection against ESD. No gate overvoltage rating is implied.
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics and Maximum Ratings
B
'B
'T
I
I
V
'V
'T
R
g
C
C
C
R
t
t
t
t
Q
Q
Q
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
rr
FS
VDSS
GS(th)
SD
DS(ON)
iss
oss
rss
G
g
gs
gd
rr
Symbol
TJA
VDSS
J
GS(th)
J
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
(Note 2)
Parameter
(Note 2)
T
a. 52 °C/W when mounted
J
on a 1 in
= 25°C unless otherwise noted
2
pad of 2 oz copper.
V
V
I
Referenced to 25°C
V
V
V
I
Referenced to 25°C
V
V
V
V
T
V
V
f = 1.0MHz
f = 1.0MHz
V
V
V
V
V
I
di/dt = 100A/Ps
D
D
F
GS
J
GS
DS
GS
DS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
= 5.7A,
= 250PA,
= 250PA,
=150°C
= 4.5V, I
2
= 16V, V
= V
= 5V,
= 10V, V
= 10V, I
= 0V , I
= r12V, V
= 4.5V, I
= 4.0V, I
= 3.1V, I
= 2.5V, I
= 10V, I
= 4.5V, R
= 4.5V
= 0V, I
Test Conditions
GS
, I
S
D
= 2.0A
D
GS
I
D
D
D
D
= 250PA
D
D
D
D
GS
GEN
= 250PA
DS
= 1A
= 5.7A,
= 5.7A,
= 5.7A
= 5.7A
= 5.0A
= 5.0A
= 5.7A
= 0V,
= 0V,
= 0V
= 6:
b. 145 °C/W when mounted on a
Min
0.6
20
minimum pad of 2 oz copper.
1.92
0.83
16.8
17.3
18.9
21.2
24.8
28.3
21.5
0.69
Typ
-3.1
701
163
125
9.8
8.6
8.6
8.8
0.9
2.4
12
www.fairchildsemi.com
Max
r10
935
220
190
1.5
2.0
1.2
18
30
31
33
40
44
20
43
18
12
20
1
2
4
5
mV/°C
mV/°C
Units
m:
PA
PA
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
ns
:
V
V
S
A
V