ZXMN10A07ZTA Diodes Zetex, ZXMN10A07ZTA Datasheet - Page 2

• Manufacturer Part Number: ZXMN10A07ZTA
• Description: MOSFET N-CH 100V 1A SOT-89
• Manufacturer: Diodes Zetex

Specifications of ZXMN10A07ZTA

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 700 mOhm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 2.9nC @ 10V
• Input Capacitance (ciss) @ Vds: 138pF @ 50V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMN10A07ZTR

ABSOLUTE MAXIMUM RATINGS
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300 s - pulse width limited by maximum junction temperature.
ZXMN10A07Z
PARAMETER
Drain-source voltage
Gate-source voltage
Continuous drain current @ V
Pulsed drain current
Continuous source current (body diode)
Pulsed source current (body diode)
Power dissipation at T
Linear derating factor
Power dissipation at T
Linear derating factor
Operating and storage temperature range
PARAMETER
Junction to ambient
Junction to ambient
Refer to Transient Thermal Impedance graph.
S E M I C O N D U C T O R S
(c)
(a)
(b)
A
A
=25°C
=25°C
@ V
@ V
GS
GS
GS
(a)
(b)
=10V; T
=10V; T
=10V; T
(c)
A
A
A
=25°C
=70°C
=25°C
(b)
10 sec.
(b)
(b)
(a)
SYMBOL
V
V
I
I
I
I
P
P
T
SYMBOL
R
R
D
DM
S
SM
2
D
D
j
DSS
GS
, T
JA
JA
stg
-55 to +150
VALUE
LIMIT
83.3
47.4
100
±20
1.1
1.4
1.0
4.2
2.1
4.2
1.5
2.6
12
21
ISSUE 6 - MAY 2004
mW/°C
mW/°C
UNIT
°C/W
°C/W
UNIT
W
W
°C
V
V
A
A
A
A