FDD3N40TM Fairchild Semiconductor, FDD3N40TM Datasheet

FDD3N40TM

Manufacturer Part Number

FDD3N40TM

Description

MOSFET N-CH 400V 2A DPAK

Manufacturer

Fairchild Semiconductor

Series

UniFET™r

Datasheet

1.FDD3N40TM.pdf (9 pages)

Specifications of FDD3N40TM

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

3.4 Ohm @ 1A, 10V

Drain To Source Voltage (vdss)

400V

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

5V @ 250µA

Gate Charge (qg) @ Vgs

6nC @ 10V

Input Capacitance (ciss) @ Vds

225pF @ 25V

Power - Max

30W

Mounting Type

Surface Mount

Package / Case

DPak, TO-252 (2 leads+tab), SC-63

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

2.8 Ohms

Forward Transconductance Gfs (max / Min)

2 S

Drain-source Breakdown Voltage

400 V

Gate-source Breakdown Voltage

+/- 30 V

Continuous Drain Current

2 A

Power Dissipation

30 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

FDD3N40TMTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FDD3N40TM

Manufacturer:

KDS

Quantity:

6 123

Company:

Meier Automation Equipment Co., Limited

Part Number:

FDD3N40TM

Manufacturer:

FAIRCHILD/仙童

Quantity:

20 000

Current page: 1 of 9
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FDD3N40 / FDU3N40 Rev. A

FDD3N40 / FDU3N40

400V N-Channel MOSFET

Features

• 2A, 400V, R

• Low gate charge ( typical 4.5 nC)

• Low C

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Absolute Maximum Ratings

Thermal Characteristics

* Drain current limited by maximum junction temperature

dv/dt

DSS

GSS

Symbol

θJC

θJA

STG

rss

( typical 3.7 pF)

DS(on)

Drain-Source Voltage

Drain Current

Gate-Source voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink Typ.

= 3.4Ω @V

FDD Series

D-PAK

= 10 V

- Continuous (T

- Pulsed

- Derate above 25°C

Parameter

= 25°C)

= 100°C)

Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficient switched mode power supplies and active power factor

correction.

(Note 1)

(Note 2)

(Note 1)

(Note 3)

FDU Series

I-PAK

FDD3N40 / FDU3N40

Typ

-55 to +150

1.25

0.24

400

±30

300

2.0

8.0

4.5

Max

110

4.2

UniFET

February 2007

www.fairchildsemi.com

Unit

W/°C

Unit

°C/W

V/ns

°C

Related parts for FDD3N40TM

FDD3N40TM Summary of contents

Page 1

... R Thermal Resistance, Junction-to-Case θJC R Thermal Resistance, Case-to-Sink Typ. θJA ©2007 Fairchild Semiconductor Corporation FDD3N40 / FDU3N40 Rev. A Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

Page 2

... Package Marking and Ordering Information Device Marking Device FDD3N40 FDD3N40TM FDD3N40 FDD3N40TF FDU3N40 FDU3N40TU Electrical Characteristics Symbol Parameter Off Characteristics BV Drain-Source Breakdown Voltage DSS ∆BV Breakdown Voltage Temperature DSS ∆T / Coefficient J I Zero Gate Voltage Drain Current DSS I Gate-Body Leakage Current, Forward ...

Page 3

Typical Performance Characteristics Figure 1. On-Region Characteristics Top : 15.0 V 10.0 V 8.0 V 7 Bottom : 5 ...

Page 4

Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 1.1 1.0 0.9 0.8 -100 - Junction Temperature [ J Figure 9. Maximum Safe Operating Area Operation in This Area is Limited ...

Page 5

Unclamped Inductive Switching Test Circuit & Waveforms FDD3N40 / FDU3N40 Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

FDD3N40 / FDU3N40 Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

Mechanical Dimensions FDD3N40 / FDU3N40 Rev. A D-PAK 7 www.fairchildsemi.com ...

Page 8

Mechanical Dimensions FDD3N40 / FDU3N40 Rev. A I-PAK 8 www.fairchildsemi.com ...

Page 9

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx Across the board. Around the world.™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ ...

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