ZXMN3A01E6TA Diodes Zetex, ZXMN3A01E6TA Datasheet - Page 4
![MOSFET N-CH 30V 2.4A SOT-23-6](/photos/5/33/53339/89-sot23-6_sml.jpg)
ZXMN3A01E6TA
Manufacturer Part Number
ZXMN3A01E6TA
Description
MOSFET N-CH 30V 2.4A SOT-23-6
Manufacturer
Diodes Zetex
Datasheet
1.ZXMN3A01E6TA.pdf
(7 pages)
Specifications of ZXMN3A01E6TA
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
120 mOhm @ 2.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2.4A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
3.9nC @ 10V
Input Capacitance (ciss) @ Vds
190pF @ 25V
Power - Max
1.1W
Mounting Type
Surface Mount
Package / Case
SOT-23-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZXMN3A01E6TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ZXMN3A01E6TA
Manufacturer:
ZETEX
Quantity:
39 000
Part Number:
ZXMN3A01E6TA
Manufacturer:
DIODES/美台
Quantity:
20 000
ELECTRICAL CHARACTERISTICS
NOTES
(1) Measured under pulsed conditions. Width 300 s. Duty cycle
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMN3A01E6
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
(1)
Forward Transconductance (1)(3)
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
(at T
SYMBOL
V (BR)DSS
I DSS
I GSS
V GS(th)
R DS(on)
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g
Q g
Q gs
Q gd
V SD
t rr
Q rr
A
= 25°C unless otherwise stated).
2% .
4
MIN.
30
1
TYP.
0.106 0.12
3.5
190
38
20
1.7
2.3
6.6.
2.9
2.3
3.9
0.6
0.9
0.84
17.7
13.0
0.5
100
0.18
0.95
MAX. UNIT CONDITIONS.
V
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
V
ns
nC
A
I D =250 A, V GS =0V
V DS =30V, V GS =0V
I
V GS =10V, I D =2.5A
V GS =4.5V, I D =2.0A
V DS =4.5V,I D =2.5A
V DS =25 V, V GS =0V,
f=1MHz
V DD =15V, I D =2.5A
R G =6.0 , V GS =10V
V DS =15V,V GS =5V,
I
V DS =15V,V GS =10V,
I
T J =25°C, I S =1.7A,
V GS =0V
T J =25°C, I F =2.5A,
di/dt= 100A/ s
V GS = 20V, V DS =0V
D
D
D
=2.5A
=2.5A
=250 A, V DS = V GS
ISSUE 2 - JULY 2002