IRFM120ATF Fairchild Semiconductor, IRFM120ATF Datasheet - Page 6

• Manufacturer Part Number: IRFM120ATF
• Description: MOSFET N-CH 100V 2.3A SOT-223
• Manufacturer: Fairchild Semiconductor

Specifications of IRFM120ATF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 200 mOhm @ 1.15A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 2.3A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Input Capacitance (ciss) @ Vds: 480pF @ 25V
• Power - Max: 2.4W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.2 Ohms
• Forward Transconductance Gfs (max / Min): 5.7 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.3 A
• Power Dissipation: 2.4 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 28 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 14 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFM120ATFTR

IRFM120A
( Driver )
( DUT )
( DUT )
V
V
I
GS
S
DS
V
GS
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
V
GS
R
G
DUT
Driver
I
I
FM
D =
S
, Body Diode Forward Current
--------------------------
Forward Voltage Drop
Gate Pulse Period
Gate Pulse Width
Body Diode
Same Type
as DUT
Body Diode Recovery dv/dt
V
• dv/dt controlled by /
• I
+
--
V
DS
S
f
controlled by Duty Factor 0?
Body Diode Reverse Current
I
RM
L
G
di/dt
V
V
POWER MOSFET
10V
DD
DD