ZXMN6A07ZTA Diodes Zetex, ZXMN6A07ZTA Datasheet - Page 2

• Manufacturer Part Number: ZXMN6A07ZTA
• Description: MOSFET N-CH 60V 1.9A SOT-89
• Manufacturer: Diodes Zetex

Specifications of ZXMN6A07ZTA

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 250 mOhm @ 1.8A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 1.9A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 3.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 166pF @ 40V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMN6A07ZTR

Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
(b) For a device surface mounted on FR4 PCB measured at t
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction
Issue 8 - January 2007
© Zetex Semiconductors plc 2007
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current @ V
Pulsed drain current
Continuous source current (body diode)
Pulsed source current (body diode)
Power dissipation at T
Linear derating factor
Power dissipation at T
Linear derating factor
Thermal resistance
Parameter
Junction to ambient
Junction to ambient
conditions.
temperature.
(c)
amb
amb
=25°C
=25°C
@ V
@ V
GS
GS
GS
(a)
(b)
= 10V; T
= 10V; T
= 10V; T
(c)
(b)
amb
amb
amb
=70°C
=25°C
=25°C
2
10 sec.
(b)
(b)
(a)
Symbol
Symbol
V
R
R
V
I
I
P
P
DM
SM
DSS
I
I
GS
D
S
D
D
JA
JA
Limit
Limit
ZXMN6A07Z
± 20
83.3
47.4
2.5
2.0
1.9
6.8
3.3
6.8
1.5
2.6
60
12
21
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mW/°C
mW/°C
°C/W
°C/W
Unit
Unit
W
W
A
A
A
A
V
V