ZXMN10A08G Diodes Zetex, ZXMN10A08G Datasheet

MOSFET N-CHAN 100V SOT223

ZXMN10A08G

Manufacturer Part Number
ZXMN10A08G
Description
MOSFET N-CHAN 100V SOT223
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXMN10A08G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
250 mOhm @ 3.2A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
2A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
7.7nC @ 10V
Input Capacitance (ciss) @ Vds
405pF @ 50V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZXMN10A08GTA
ZXMN10A08GTR
ZXMN10A08G
100V SOT223 N-channel enhancement mode MOSFET
Summary
Description
This new generation trench MOSFET from Zetex features a unique
structure combining the benefits of low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
Features
Applications
Ordering information
Device marking
ZXMN
10A08
Issue 1 - June 2006
© Zetex Semiconductors plc 2006
Device
ZXMN10A08GTA
V
100
(BR)DSS
Low on-resistance
Fast switching speed
Low threshold
SOT223 package
DC-DC converters
Power management functions
Disconnect switches
Motor control
0.250 @ V
0.300 @ V
R
Reel size
(inches)
DS(on)
7
GS
GS
( )
= 10V
= 6V
Tape width
(mm)
12
I
D
2.9
2.6
(A)
1
Quantity
per reel
1,000
D
Pinout - top view
www.zetex.com
G
S
D
D
G
S

Related parts for ZXMN10A08G

ZXMN10A08G Summary of contents

Page 1

... Low threshold • SOT223 package Applications • DC-DC converters • Power management functions • Disconnect switches • Motor control Ordering information Device Reel size (inches) ZXMN10A08GTA 7 Device marking ZXMN 10A08 Issue 1 - June 2006 © Zetex Semiconductors plc 2006 ( ) I ( 10V 2 2.6 GS ...

Page 2

... Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02,pulse width 300 s - pulse width limited by maximum junction temperature. Issue 1 - June 2006 © Zetex Semiconductors plc 2006 ( 10V 25°C GS amb ( 10V 70°C GS amb ( 10V 25°C GS amb (b) (c) (a) (b) 10 sec. 2 ZXMN10A08G Symbol Limit Unit V 100 DSS V ± 2.9 D 2.3 2 mW/° ...

Page 3

... Thermal characteristics Issue 1 - June 2006 © Zetex Semiconductors plc 2006 ZXMN10A08G 3 www.zetex.com ...

Page 4

... DSS I 100 GSS V 2.0 GS(th) R 0.25 DS(on) 0. 405 iss C 28.2 oss C 14.2 rss t 3.4 d(on d(off 0.87 0. 300 s; duty cycle 2%. 4 ZXMN10A08G Unit Conditions 250 100V =±20V 250 10V 15V 3. 50V f=1MHz 30V 1. ≅6 ...

Page 5

... Typical characteristics Issue 1 - June 2006 © Zetex Semiconductors plc 2006 ZXMN10A08G 5 www.zetex.com ...

Page 6

... Typical characteristics Charge Basic gate charge waveform V DS 90% 10 d(on (on) Switching time waveforms Issue 1 - June 2006 © Zetex Semiconductors plc 2006 t t d(off (on) Switching time test circuit 6 ZXMN10A08G Current regulator 50k Same as 12V D.U D.U Gate charge test circuit www.zetex.com ...

Page 7

... Issue 1 - June 2006 © Zetex Semiconductors plc 2006 Intentionally left blank 7 ZXMN10A08G www.zetex.com ...

Page 8

... Asia Pacific Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com 8 ZXMN10A08G Millimeters Inches Min Max Min 2.30 BSC 0.0905 BSC 4.60 BSC 0.181 BSC 6.70 7.30 ...

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