DMN4027SSS-13 Diodes Zetex, DMN4027SSS-13 Datasheet - Page 5

• Manufacturer Part Number: DMN4027SSS-13
• Description: MOSFET N-CH 40V 6A SO8
• Manufacturer: Diodes Zetex

Specifications of DMN4027SSS-13

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 27 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 12.9nC @ 10V
• Input Capacitance (ciss) @ Vds: 604pF @ 20V
• Power - Max: 1.56W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DMN4027SSS-13TR

Typical Characteristics
DMN4027SSS
Document Number DS32103 Rev 1 - 2
1E-3
0.01
0.01
0.01
Typical Transfer Characteristics
0.1
0.1
0.1
On-Resistance v Drain Current
10
10
0.01
1
1
1
T = 25°C
V
0.1
DS
V
V
= 10V
DS
1
GS
Output Characteristics
T = 150°C
0.1
Drain-Source Voltage (V)
10V
Gate-Source Voltage (V)
I
D
Drain Current (A)
4.5V
3V
1
2
1
T = 25°C
10
3.5V
4V
T = 25°C
10
3
3.5V
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4.5V
2.5V
10V
V
V
3V
GS
GS
5 of 8
Normalised Curves v Temperature
Source-Drain Diode Forward Voltage
1E-3
0.01
0.01
0.1
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.1
10
10
1
1
-50
0.2
T = 150°C
0.1
V
V
Tj Junction Temperature (°C)
T = 150°C
DS
SD
Output Characteristics
0.4
Diodes Incorporated
Drain-Source Voltage (V)
0
Source-Drain Voltage (V)
A Product Line of
V
I
D
GS
10V
= 250uA
1
0.6
= V
50
V
I
D
DS
GS
= 12A
= 10V
T = 25°C
Vgs = 0V
100
0.8
DMN4027SSS
3.5V
4V
10
R
DS(on)
V
3V
2.5V
2V
GS(th)
© Diodes Incorporated
V
GS
150
1.0
March 2010