ZXM62P02E6TA Diodes Zetex, ZXM62P02E6TA Datasheet - Page 5

• Manufacturer Part Number: ZXM62P02E6TA
• Description: MOSFET P-CH 20V 2.3A SOT23-6
• Manufacturer: Diodes Zetex

Specifications of ZXM62P02E6TA

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 200 mOhm @ 1.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.3A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 5.8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 320pF @ 15V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXM62P02E6TR

ISSUE 1 - JUNE 2004
100
100
0.1
0.1
0.1
10
10
10
1
1
1
0.1
0.1
1
Typical Transfer Characteristics
On-Resistance v Drain Current
+25°C
VDS=-10V
-V
1.5
T=150°C
-V
T=25°C
Output Characteristics
DS
GS
VGS=-3V
VGS=-5V
-I
- Drain-Source Voltage (V)
2
- Gate-Source Voltage (V)
D
- Drain Current (A)
1
1
2.5
5V
3
4.5V
TYPICAL CHARACTERISTICS
3.5
10
10
-VGS
4
4V
3V
2V
3.5V
2.5V
4.5
100
100
5
5
100
100
0.1
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.1
10
10
Source-Drain Diode Forward Voltage
1
1
-100
0.1
0.2
Normalised R
+150°C
-V
-V
T
0.4
-50
Output Characteristics
j
DS
SD
- Junction Temperature (°C)
- Drain-Source Voltage (V)
- Source-Drain Voltage (V)
v Temperature
0.6
1
0
DS(on)
ZXM62P02E6
0.8
50
T=150°C
T=25°C
5V
and V
VGS(th)
RDS(on)
100
1.0
10
4.5V
VGS=VDS
ID=-250µA
GS(th)
-VGS
ID=-1.6A
VGS=-4.5V
4V
150
3V
2V
1.2
3.5V
2.5V
100
200
1.4