SI4435DY Fairchild Semiconductor, SI4435DY Datasheet
SI4435DY
Manufacturer Part Number
SI4435DY
Description
MOSFET P-CH 30V 8.8A 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Type
Power MOSFETr
Datasheet
1.SI4435DY.pdf
(5 pages)
Specifications of SI4435DY
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
20 mOhm @ 8.8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8.8A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
24nC @ 5V
Input Capacitance (ciss) @ Vds
1604pF @ 15V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.02Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Continuous Drain Current
8.8A
Power Dissipation
2.5W
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC N
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI4435DYFSTR
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4435DY
Manufacturer:
Fairchild Semiconductor
Quantity:
48 628
Part Number:
SI4435DY
Manufacturer:
VISHAY
Quantity:
20 000
Part Number:
SI4435DY-T1
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VISHAY/威世
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20 000
Part Number:
SI4435DY-T1-A-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
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Part Number:
SI4435DY-T1-E3
Manufacturer:
TRACO
Quantity:
120
Company:
Part Number:
SI4435DY-T1-E3
Manufacturer:
VISHAY
Quantity:
15 000
Part Number:
SI4435DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI4435DY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI4435DY/PBF/TR/TRPBF
Manufacturer:
VISHAY
Quantity:
3 309
SI4435DY
30V P-Channel PowerTrench MOSFET
General Description
This P -Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gave drive
voltage ratings (4.5V – 25V).
Applications
2001 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
R
Package Marking and Ordering Information
D
Power management
Load switch
Battery protection
D
J
DSS
GSS
, T
JA
JA
J C
Device Marking
STG
SI4435DY
SO-8
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D
D
Pin 1
D
D
SO-8
D
D
– Continuous
– Pulsed
D
SI4435DY
D
Device
Parameter
S
S
S
S
S
S
G
G
T
A
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
(Note 1c)
(Note 1)
Features
–8.8 A, –30 V
Low gate charge (17nC typical)
Fast switching speed
High performance trench technology for extremely
low R
High power and current handling capability
DS(ON)
5
6
7
8
Tape width
–55 to +175
12mm
R
R
Ratings
DS(ON)
DS(ON)
–8.8
–30
–50
125
2.5
1.2
25
50
20
1
= 20 m @ V
= 35 m @ V
October 2001
4
3
2
1
SI4435DY Rev D1(W)
GS
GS
2500 units
Quantity
= –10 V
= –4.5 V
Units
C/W
C/W
C/W
W
V
V
A
C
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Datasheet:
SI4435DY Summary of contents
Page 1
... C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1c) (Note 1) Reel Size 13’’ October 2001 –10 V DS(ON –4.5 V DS(ON Ratings Units – –8.8 A –50 2.5 W 1.2 1 –55 to +175 C 50 C/W 125 C/W 25 C/W Tape width Quantity 12mm 2500 units SI4435DY Rev D1(W) ...
Page 2
... Min Typ Max Units –30 V –21 mV/ C –1 100 nA –100 nA –1 –1.7 – mV =125 C – 1604 pF 408 pF 202 13 –2.1 A –0.73 –1.2 V (Note 2) c) 125°C/W when mounted on a minimum pad. SI4435DY Rev D1(W) A ...
Page 3
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. =-4.5V GS -4.5V -5.0V -6.0V -7.0V -8.0V -10V DRAIN CURRENT ( -4. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD SI4435DY Rev D1( 1.2 ...
Page 4
... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec MHz ISS C OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 125°C 25° 100 1000 t , TIME (sec) 1 Power Dissipation. R ( 125 C/W JA P(pk ( Duty Cycle 100 SI4435DY Rev D1(W) 30 1000 ...
Page 5
CROSSVOLT â â â â Rev. H5 ...