DMN6066SSS-13 Diodes Zetex, DMN6066SSS-13 Datasheet - Page 6

• Manufacturer Part Number: DMN6066SSS-13
• Description: MOSFET N-CH 60V 3.7A SO8
• Manufacturer: Diodes Zetex

Specifications of DMN6066SSS-13

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 66 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3.7A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 10.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 502pF @ 30V
• Power - Max: 1.56W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DMN6066SSS-13TR

Typical Characteristics - continued
Test Circuits
DMN6066SSS
Document Number DS32110 Rev 1 - 2
90%
10%
V
V
GS
DS
V
G
600
400
200
Capacitance v Drain-Source Voltage
0
Q
0.1
GS
t
Basic gate charge waveform
d(on)
Switching time waveforms
V
t
(on)
DS
t
r
- Drain - Source Voltage (V)
Q
C
Q
G
ISS
GD
1
Charge
C
OSS
t
d(off)
C
RSS
t
(on)
10
t
r
V
f = 1MHz
GS
= 0V
www.diodes.com
6 of 8
10
Gate-Source Voltage v Gate Charge
8
6
4
2
0
0
Switching time test circuit
Gate charge test circuit
12V
2
R
Diodes Incorporated
G
Q - Charge (nC)
A Product Line of
4
V
regulator
Current
GS
50k
I
G
V
GS
6
R
Same as
D.U.T
D
D.U.T
DMN6066SSS
8
V
I
D
DS
= 4.5A
V
DS
= 30V
© Diodes Incorporated
10
I
V
D
DS
March 2010
V
DD