ZXMP6A17KTC Diodes Zetex, ZXMP6A17KTC Datasheet - Page 4

• Manufacturer Part Number: ZXMP6A17KTC
• Description: MOSFET P-CH 60V 4.4A DPAK
• Manufacturer: Diodes Zetex

Specifications of ZXMP6A17KTC

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 125 mOhm @ 2.3A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 4.4A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 17.7nC @ 10V
• Input Capacitance (ciss) @ Vds: 637pF @ 30V
• Power - Max: 2.11W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMP6A17KTCDITR

Electrical Characteristics
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 7)
Forward Transconductance (Notes 7 & 8)
Diode Forward Voltage (Note 7)
Reverse recovery time (Note 8)
Reverse recovery charge (Note 8)
DYNAMIC CHARACTERISTICS (
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time (Note 9)
Turn-On Rise Time (Note 9)
Turn-Off Delay Time (Note 9)
Turn-Off Fall Time (Note 9)
Notes:
ZXMP6A17K
Document Revision: 2
7. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
8. For design aid only, not subject to production testing.
9. Switching characteristics are independent of operating junction temperatures.
Characteristic
Note 8
@T
)
A
= 25°C unless otherwise specified
Symbol
R
BV
V
DS (ON)
t
t
I
I
C
V
C
C
GS(th)
Q
Q
D(on)
D(off)
DSS
GSS
Q
Q
Q
g
t
oss
t
t
SD
rss
DSS
rr
iss
fs
gs
gd
r
f
rr
g
g
www.diodes.com
Min
-1.0
4 of 8
-60
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-0.85
25.1
27.2
17.7
26.2
11.3
Typ
637
4.7
9.0
1.6
4.4
2.6
3.4
70
53
⎯
⎯
⎯
⎯
⎯
0.125
0.190
±100
-0.95
Max
-0.5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Diodes Incorporated
A Product Line of
Unit
μA
nA
nC
nC
nC
nC
nC
ns
pF
pF
pF
ns
ns
ns
ns
Ω
V
V
S
V
I
V
V
I
V
V
V
I
I
V
f= 1MHz
V
V
V
I
D
D
S
S
D
DS
GS
GS
GS
DS
DS
GS
GS
DD
= -250μA, V
= -2A, V
= -1.7A, di/dt= 100A/μs
= -1A, R
= -250μA, V
= -60V, V
= -15V, I
= -30V, V
= -30V, V
= ±20V, V
= -10V, I
= -4.5V, I
= -4.5V
= -10V
Test Condition
GS
G
≅ 6.0Ω
D
= 0V
D
ZXMP6A17K
D
GS
GS
GS
= -2.2A
DS
= -2.3A
DS
GS
= -1.9A
= 0V
= 0V
= -10V
= 0V
= V
= 0V
V
I
© Diodes Incorporated
D
DS
GS
= -2.2A
= -30V
July 2009