ZXM62N03GTA Diodes Zetex, ZXM62N03GTA Datasheet - Page 2

• Manufacturer Part Number: ZXM62N03GTA
• Description: MOSFET N-CH 30V ENHANCE SOT223
• Manufacturer: Diodes Zetex

Specifications of ZXM62N03GTA

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 110 mOhm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.4A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 9.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 380pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXM62N03GTR

ABSOLUTE MAXIMUM RATING
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width limited by maximum junction temperature.
ZXM62N03G
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (V
Pulsed Drain Current (c)
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode)(c)
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Operating and Storage Temperature Range
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
A
A
=25°C (a)
=25°C (b)
(V
(V
GS
GS
GS
=10V; T
=10V; T
=10V; T
A
A
A
=25°C)(b)
=70°C)(b)
=25°C)(a)
2
SYMBOL
V
V
I
I
I
I
P
P
T
SYMBOL
R
R
D
DM
S
SM
D
D
j
DSS
GS
:T
JA
JA
stg
-55 to +150
VALUE
LIMIT
62.5
4.7
3.8
3.4
2.6
2.0
3.9
32
30
16
16
16
31
20
ISSUE 1 - OCTOBER 2002
mW/°C
mW/°C
UNIT
UNIT
°C/W
°C/W
°C
W
W
V
V
A
A
A
A