FDC6392S Fairchild Semiconductor, FDC6392S Datasheet
FDC6392S
Specifications of FDC6392S
FDC6392S_NL
FDC6392S_NLTR
FDC6392S_NLTR
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FDC6392S Summary of contents
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... FDC6392S 20V Integrated P-Channel PowerTrench General Description The FDC6392S combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SSOT-6 package. This device is designed specifically as a single package solution for converters. It features a fast switching, low gate charge MOSFET with very low on- state resistance ...
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... V 3 mV/°C 101 150 mΩ 152 200 132 211 – 369 7.6 Ω 3.7 5 –0.8 A –0.8 –1.2 V 5.4 nS 1.2 nC 148 400 µ 200 µA 5 0.34 0.4 V 0.26 0.35 0.40 0.45 V 0.35 0.42 FDC6392S Rev C(W) ...
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... Scale letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2. 25°C unless otherwise noted A is determined by the user's board design. θCA b) 140°C/W when mounted .004 in pad copper c) 180°C/W when mounted on a minimum pad. FDC6392S Rev C(W) ...
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... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. -2.5V -3.0V -3.5V -4. DRAIN CURRENT ( -1. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDC6392S Rev C( 1.2 ...
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... Figure 8. Capacitance Characteristics. 1.E-01 1.E- 1.E-03 1.E-04 0.4 0.5 1.E-05 0 Figure 10. Schottky Diode Reverse Current. 0.01 0 1MHz ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE ( 125 REVERSE VOLTAGE ( ( θJA θ 180 °C/W θJA P(pk ( θJA Duty Cycle 100 FDC6392S Rev C(W) 1000 ...
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CROSSVOLT â â â â Rev. H5 ...