SI4431CDY-T1-GE3 Vishay, SI4431CDY-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI4431CDY-T1-GE3
• Description: MOSFET P-CH 30V 9A 8-SOIC
• Manufacturer: Vishay

Specifications of SI4431CDY-T1-GE3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 32 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 1006pF @ 15V
• Power - Max: 4.2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.032 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -9A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 49mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: -2.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4431CDY-T1-GE3TR

Si4431CDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
100
2.1
1.9
1.7
1.5
1.3
1.1
0.1
10
- 50
1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
- 25
Source-Drain Diode Forward Voltage
V
SD
0
T
- Source-to-Drain Voltage (V)
J
Threshold Voltage
T
= 150 °C
J
25
- Temperature (°C)
50
I
D
= 250 µA
75
0.01
100
0.1
10
100
1
0.1
T
J
= 25 °C
* V
Single Pulse
T
125
A
GS
= 25 °C
> minimum V
New Product
Limited by R
V
150
DS
Safe Operating Area
- Drain-to-Source Voltage (V)
1
DS(on)
GS
at which R
*
BVDSS
Limited
0.05
0.04
0.03
0.02
0.01
0.00
10
DS(on)
50
40
30
20
10
0.001
0
0
is specified
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
100 ms
1 ms
10 ms
1 s
10 s
DC
0.01
4
V
100
GS
- Gate-to-Source Voltage (V)
0.1
8
Time (s)
S09-0322-Rev. B, 02-Mar-09
Document Number: 68748
12
1
T
T
I
D
J
J
16
10
= 125 °C
= 25 °C
= 7 A
100
20