ZXMN6A25K Diodes Zetex, ZXMN6A25K Datasheet

MOSFET N-CHAN 60V DPAK

ZXMN6A25K

Manufacturer Part Number
ZXMN6A25K
Description
MOSFET N-CHAN 60V DPAK
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXMN6A25K

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
50 mOhm @ 3.6A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
20.4nC @ 10V
Input Capacitance (ciss) @ Vds
1063pF @ 30V
Power - Max
2.11W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZXMN6A25KTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMN6A25KTC
Manufacturer:
DIODES
Quantity:
10 000
ZXMN6A25K
60V DPAK N-channel enhancement mode MOSFET
Summary
Description
This new generation trench MOSFET from Zetex features a unique
structure combining the benefits of low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
Features
Applications
Ordering information
Device marking
ZXMN
6A25
Issue 3 - Novmber 2006
© Zetex Semiconductors plc 2006
V
60
Device
ZXMN6A25KTC
(BR)DSS
Low on-resistance
Fast switching speed
Low gate drive
DPAK package
DC-DC converters
Power management functions
Disconnect switches
Motor control
0.070 @ V
0.050 @ V
R
DS(on)
Reel size
(inches)
13
GS
GS
( )
= 4.5V
= 10V
Tape width
(mm)
16
I
D
10.7
9
(A)
1
Quantity
per reel
2,500
Pinout - top view
www.zetex.com
G
G
D
D
S
D
S

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ZXMN6A25K Summary of contents

Page 1

... DPAK package Applications • DC-DC converters • Power management functions • Disconnect switches • Motor control Ordering information Device Reel size (inches) ZXMN6A25KTC 13 Device marking ZXMN 6A25 Issue 3 - Novmber 2006 © Zetex Semiconductors plc 2006 ( ) I ( 10V 10.7 = 4.5V 9 Tape width ...

Page 2

... For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz. copper, in still air conditions. Issue 3 - Novmber 2006 © Zetex Semiconductors plc 2006 (b) = 10V; T =25°C GS amb ( 10V; T =70°C GS amb ( 10V; T =25°C GS amb (b) (c) (a) (b) (d) 10 sec. 2 ZXMN6A25K Symbol Limit Unit V 60 DSS V ± 10 mW/° ...

Page 3

... Thermal characteristics Issue 3 - Novmber 2006 © Zetex Semiconductors plc 2006 ZXMN6A25K 3 www.zetex.com ...

Page 4

... GS(th) R DS(on) g 10.2 (*)(‡ 1063 iss C 104 oss C 64 rss t 3.8 d(on 26.2 d(off 21.4 rr 300 s; duty cycle 4 ZXMN6A25K Max. Unit Conditions 250 1 60V 100 nA V =±20V 250 0.050 V = 10V 3. 0.070 V = 4.5V 15V 4. 30V f=1MHz 30V, I ...

Page 5

... Typical characteristics Issue 3 - Novmber 2006 © Zetex Semiconductors plc 2006 ZXMN6A25K 5 www.zetex.com ...

Page 6

... Typical characteristics Charge Basic gate charge waveform V DS 90% 10 d(on (on) Switching time waveforms Issue 3 - Novmber 2006 © Zetex Semiconductors plc 2006 t t d(off (on) Switching time test circuit 6 ZXMN6A25K Current regulator 50k Same as 12V D.U D.U Gate charge test circuit www.zetex.com ...

Page 7

... L2 0.457 0.61 L3 0.457 0.584 L4 5.41 6.22 L5 θ1° 5.21 - θ° 6.35 6.73 4. ZXMN6A25K Inches Millimeters Min Max Min 0.090 BSC 2.29 BSC 0.370 0.410 9.40 0.055 0.070 1.40 0.108 REF 2.74 REF 0.020 BSC 0.508 BSC 0.035 0.065 0.89 ...

Page 8

... Fax: (49 Fax: (1) 631 360 8222 europe.sales@zetex.com usa.sales@zetex.com © 2006 Published by Zetex Semiconductors plc Issue 3 - Novmber 2006 © Zetex Semiconductors plc 2006 ZXMN6A25K Asia Pacific Corporate Headquarters Zetex (Asia Ltd) Zetex Semiconductors plc 3701-04 Metroplaza Tower 1 Zetex Technology Park, Chadderton Hing Fong Road, Kwai Fong ...

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