RFD16N05LSM9A Fairchild Semiconductor, RFD16N05LSM9A Datasheet - Page 3

• Manufacturer Part Number: RFD16N05LSM9A
• Description: MOSFET N-CH 50V 16A TO-252AA
• Manufacturer: Fairchild Semiconductor

Specifications of RFD16N05LSM9A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 47 mOhm @ 16A, 5V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 2V @ 250mA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Power - Max: 60W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.047 Ohms
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 16 A
• Power Dissipation: 60 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: RFD16N05LSM9ATR

Typical Performance Curves
©2003 Fairchild Semiconductor Corporation
10
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
0.1
45
30
15
1.2
1.0
0.8
0.6
0.4
0.2
10
0
1
2
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
0
1
0
0
T
I
V
T
OPERATION IN THIS AREA
LIMITED BY r
D
C
FIGURE 5. SATURATION CHARACTERISTICS
J
GS
MAX CONTINUOUS
= 25
= MAX RATED
= 10V
o
TEMPERATURE
C
25
1.5
V
V
DS
DS
DS(ON)
, DRAIN TO SOURCE VOLTAGE (V)
T
, DRAIN TO SOURCE VOLTAGE (V)
C
, CASE TEMPERATURE (
V
50
GS
V
3.0
GS
= 5V
= 4V
10
75
DUTY CYCLE = 0.5% MAX.
PULSE DURATION = 80 s
4.5
100
Unless Otherwise Specified
o
C)
6.0
125
T
V
V
C
GS
GS
DC
= 25
= 3V
= 2V
o
C
150
10
7.5
2
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
FIGURE 4. UNCLAMPED INDUCTIVE SWITCHING SOA
Idm
10
45
30
15
20
15
10
10
0
5
0
1
0.01
2
0
25
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
V
If R = 0
t
If R
t
AV
DS
AV
FIGURE 6. TRANSFER CHARACTERISTICS
= (L)(I
= (L/R)ln[(I
= 15V
STARTING T
0
CASE TEMPERATURE
(SINGLE PULSE UIS SOA)
AS
50
V
GS
1.5
)/(1.3 RATED BV
T
AS
t
, GATE TO SOURCE VOLTAGE (V)
AV
C
, CASE TEMPERATURE (
*R)/(1.3 RATED BV
, TIME IN AVALANCHE (ms)
J
0.10
= 150
75
o
C
3.0
DSS
RFD16N05L, RFD16N05LSM Rev. B1
- V
STARTING T
100
DSS
DD
)
1
- V
o
DD
C)
4.5
) +1]
J
125
= 25
o
C
150
6.0
10