ZVN4424GTA Diodes Zetex, ZVN4424GTA Datasheet - Page 2

• Manufacturer Part Number: ZVN4424GTA
• Description: MOSFET N-CH 240V 500MA SOT223
• Manufacturer: Diodes Zetex
• Type: Power MOSFETr

Specifications of ZVN4424GTA

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.5 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 240V
• Current - Continuous Drain (id) @ 25° C: 500mA
• Vgs(th) (max) @ Id: 1.8V @ 1mA
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 5.5Ohm
• Drain-source On-volt: 240V
• Gate-source Voltage (max): ±40V
• Continuous Drain Current: 500mA
• Power Dissipation: 2.5W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Compliant
• Other names: ZVN4424GTR

ELECTRICAL CHARACTERISTICS (at T
(1) Measured under pulsed conditions. Width=300 s. Duty cycle 2%
(2) Sample test.
(3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
PARAMETER
Drain-Source Breakdown
Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
On State Drain-Current
Zero Gate Voltage Drain
Current
Static Drain-Source
On-State Resistance
Forward
Transconductance (1) (2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
ZVN4424G
SYMBOL MIN.
BV
V
I
I
I
R
g
C
C
C
t
t
t
t
GSS
D(on)
DSS
d(on)
r
d(off)
f
fs
GS(th)
DS(on)
iss
oss
rss
DSS
240
0.8
0.8
0.4
3 - 416
amb
TYP
1.3
1.4
4
4.3
0.75
110
15
3.5
2.5
5
40
16
= 25°C unless otherwise stated).
MAX. UNIT
1.8
100
10
100
5.5
6
200
25
15
5
8
60
25
V
V
nA
A
S
pF
pF
pF
ns
ns
ns
ns
A
A
CONDITIONS.
I
I
V
V
V
V
V
V
V
V
V
D
D
GS
DS
DS
DS
GS
GS
DS
DS
DD
=1mA, V
=1mA, V
=10V, V
=240 V, V
=190 V, V
=10V,I
=25V, V
= 40V, V
=10V,I
=2.5V,I
50V, I
D
D
GS
DS
D
=500mA*
=0.5A
D
GS
GS
=100mA*
=0.25A, V
=0V
= V
DS
GS
GS
=10V
=0V, f=1MHz
=0V
=0V
=0V, T=125°C
GS
GEN
=10V