FDS6675 Fairchild Semiconductor, FDS6675 Datasheet

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... High power and current handling capability. TM SO-8 SuperSOT - unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) January 2007 MOSFET = 0.014 @ V = -10 V, DS(ON 0.020 @ V = -4.5 V. DS(ON SOIC-16 SOT-223 FDS6675 -30 ±20 -11 -50 2.5 1.2 1 -55 to 150 Units °C °C/W °C/W FDS6675 Rev.C2 ...

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... Min Typ Max - - 55°C -10 J 100 -100 -1 -1 4.3 0.011 0.014 T =125°C 0.016 0.023 J 0.015 0.02 -50 32 3000 870 360 100 140 -2.1 -0.72 -1.2 (Note 125 C 0.006 in of 2oz copper. Units V o mV/ C µA µ mV pad FDS6675 Rev.C2 ...

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... V -5.5V -7. DRAIN CURRENT (A) D Dain Current and Gate Voltage -5. 125° 25° GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125° 25° C -55° C 0.4 0 BODY DIODE FORWARD VOLTAGE (V) SD Variation with Source Current and Temperature. -10V 50 10 1.2 FDS6675 Rev.C2 ...

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... Transient thermal response will change depending on the circuit board design. C iss C oss C rss = 0 V 0.2 0 DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R =125°C 25°C A 0.01 0 SINGLE PULSE TIME (SEC) Dissipation. R ( 125°C/W JA P(pk ( Duty Cycle 100 300 FDS6675 Rev. 100 300 ...

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... Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ® UniFET™ VCX™ Wire™ ® ® Definition Rev. I22 FDS6675 Rev.C2 ...