FDS6574A Fairchild Semiconductor, FDS6574A Datasheet
FDS6574A
Manufacturer Part Number
FDS6574A
Description
MOSFET N-CH 20V 16A 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDS6574A.pdf
(5 pages)
Specifications of FDS6574A
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6 mOhm @ 16A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
105nC @ 4.5V
Input Capacitance (ciss) @ Vds
7657pF @ 10V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.006 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
115 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
16 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS6574A
FDS6574ATR
FDS6574ATR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDS6574A-NL
Manufacturer:
FAIRCHILD
Quantity:
50 000
Part Number:
FDS6574A-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
FDS6574A
20V N-Channel PowerTrench MOSFET
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
Applications
D
2008 Fairchild Semiconductor Corporation
J
DSS
GSS
D
, T
JA
JC
DC/DC converter
Device Marking
STG
FDS6574A
N-Channel
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D
MOSFET
D
DS(ON)
SO-8
D
D
and fast switching speed.
– Continuous
– Pulsed
has
FDS6574A
Device
S
Parameter
S
been
S
G
designed
T
A
=25
o
C unless otherwise noted
Reel Size
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1c)
13’’
(Note 1)
Features
•
16 A, 20 V.
Low gate charge
High performance trench technology for extremely
low R
High power and current handling capability
RoHS Compliant
DS(ON)
5
6
7
8
R
R
R
Tape width
DS(ON)
DS(ON)
DS(ON)
12mm
–55 to +175
Ratings
2.5
1.2
1.0
= 7 m @ V
= 9 m @ V
20
16
80
50
25
= 6 m @ V
8
May 2008
GS
GS
GS
4
3
2
1
= 4.5 V
= 2.5 V
= 1.8 V
FDS6574A Rev B2(W)
2500 units
Quantity
Units
tmM
C/W
C/W
W
V
V
A
C
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Datasheet:
FDS6574A Summary of contents
Page 1
... C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) Reel Size 13’’ May 2008 tmM 4.5 V DS(ON 2.5 V DS(ON 1.8 V DS(ON Ratings Units 2.5 W 1.2 1.0 –55 to +175 C 50 C/W 25 C/W Tape width Quantity 12mm 2500 units FDS6574A Rev B2(W) ...
Page 2
... Min Typ Max Units mV 100 nA –100 nA 0.4 0.6 1.5 V –2 115 S 7657 pF 1432 pF 775 pF 19 173 277 ns 82 131 ns 75 105 2.1 A 0.56 1 125°C/W when mounted on a minimum pad. FDS6574A Rev B2(W) ...
Page 3
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = 1.5V 1.8V 2.5V 3.0V 3.5V 4. 100 I , DIRAIN CURRENT ( 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS6574A Rev B2( ...
Page 4
... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec MHz ISS C OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 125°C 25°C A 0.01 0 TIME (sec) 1 Power Dissipation ( 125 C/W JA P(pk ( Duty Cycle 100 1000 FDS6574A Rev B2(W) 20 100 ...
Page 5
... Fairchild Semiconductor. The datasheet is for reference information only. The Power Franchise ® tm TinyBoost™ TinyBuck™ ® TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ ® UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ ® Definition FDS6574A Rev B2(W) ® Rev. I34 ...