IRLR014TRPBF Vishay, IRLR014TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRLR014TRPBF
• Description: MOSFET N-CH 60V 7.7A DPAK
• Manufacturer: Vishay

Specifications of IRLR014TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 200 mOhm @ 4.6A, 5V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 7.7A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 8.4nC @ 5V
• Input Capacitance (ciss) @ Vds: 400pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 7.7A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 200mohm
• Rds(on) Test Voltage Vgs: 5V
• Leaded Process Compatible: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.2 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 7.7 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IRLR014PBFTR

Document Number: 91321
S09-0058-Rev. A, 02-Feb-09
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRLR014, IRLU014, SiHLR014, SiHLU014
90 %
10 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
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GS
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Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
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5 V
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t
r
D.U.T.
Vishay Siliconix
R
D
t
d(off)
t
f
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www.vishay.com
V
DD
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