SI7423DN-T1-E3 Vishay, SI7423DN-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI7423DN-T1-E3
• Description: MOSFET P-CH 30V 7.4A 1212-8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7423DN-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18 mOhm @ 11.7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7.4A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 56nC @ 10V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK 1212-8
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.018 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7.4 A
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -11.7A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 18mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI7423DN-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72582
S-83051-Rev. C, 29-Dec-08
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0.000
10
50
10
8
6
4
2
0
1
0.0
0
0
Source-Drain Diode Forward Voltage
V
I
D
5
0.2
DS
On-Resistance vs. Drain Current
= 11.7 A
V
5
GS
= 15 V
V
10
= 4.5 V
SD
T
Q
0.4
J
g
- Source-to-Drain Voltage (V)
= 150 °C
10
I
- Total Gate Charge (nC)
D
15
- Drain Current (A)
Gate Charge
0.6
20
15
0.8
25
20
T
J
V
1.0
= 25 °C
GS
30
= 10 V
25
1.2
35
40
1.4
30
3000
2500
2000
1500
1000
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
500
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
rss
- 25
V
I
D
GS
= 11.7 A
5
V
V
2
= 10 V
GS
DS
T
0
J
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
10
Capacitance
25
4
I
D
= 11.7 A
C
C
50
15
iss
Vishay Siliconix
oss
6
75
Si7423DN
20
www.vishay.com
100
8
25
125
150
10
30
3