SI7423DN-T1-E3 Vishay, SI7423DN-T1-E3 Datasheet - Page 3
![MOSFET P-CH 30V 7.4A 1212-8](/photos/5/42/54273/pkg_5882_sml.jpg)
SI7423DN-T1-E3
Manufacturer Part Number
SI7423DN-T1-E3
Description
MOSFET P-CH 30V 7.4A 1212-8
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SI7423DN-T1-E3.pdf
(6 pages)
Specifications of SI7423DN-T1-E3
Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
18 mOhm @ 11.7A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
7.4A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
56nC @ 10V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
PowerPAK 1212-8
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.018 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
7.4 A
Power Dissipation
1500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-11.7A
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
18mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI7423DN-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7423DN-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72582
S-83051-Rev. C, 29-Dec-08
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0.000
10
50
10
8
6
4
2
0
1
0.0
0
0
Source-Drain Diode Forward Voltage
V
I
D
5
0.2
DS
On-Resistance vs. Drain Current
= 11.7 A
V
5
GS
= 15 V
V
10
= 4.5 V
SD
T
Q
0.4
J
g
- Source-to-Drain Voltage (V)
= 150 °C
10
I
- Total Gate Charge (nC)
D
15
- Drain Current (A)
Gate Charge
0.6
20
15
0.8
25
20
T
J
V
1.0
= 25 °C
GS
30
= 10 V
25
1.2
35
40
1.4
30
3000
2500
2000
1500
1000
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
500
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
rss
- 25
V
I
D
GS
= 11.7 A
5
V
V
2
= 10 V
GS
DS
T
0
J
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
10
Capacitance
25
4
I
D
= 11.7 A
C
C
50
15
iss
Vishay Siliconix
oss
6
75
Si7423DN
20
www.vishay.com
100
8
25
125
150
10
30
3