SI7620DN-T1-GE3 Vishay, SI7620DN-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI7620DN-T1-GE3
• Description: MOSFET N-CH 150V 13A 1212-8
• Manufacturer: Vishay

Specifications of SI7620DN-T1-GE3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 126 mOhm @ 3.6A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 600pF @ 75V
• Power - Max: 5.2W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® 1212-8
• Minimum Operating Temperature: - 55 C
• Resistance Drain-source Rds (on): 0.103 Ohms
• Forward Transconductance Gfs (max / Min): 10 S
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 3.8 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 13A
• Drain Source Voltage Vds: 150V
• On Resistance Rds(on): 126mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 4.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI7620DN-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 68702
S-81215-Rev. A, 02-Jun-08
0.14
0.13
0.12
0.11
0.10
0.09
0.08
15
12
10
On-Resistance vs. Drain Current and Gate Voltage
9
6
3
0
8
6
4
2
0
0.0
0
0
I
D
V
= 3.6 A
0.5
GS
3
2
V
= 10 V
DS
Output Characteristics
Q
- Drain-to-Source Voltage (V)
g
1.0
I
D
- Total Gate Charge (nC)
Gate Charge
- Drain Current (A)
V
DS
6
4
= 75 V
1.5
9
6
V
2.0
GS
V
= 10 thru 7 V
DS
V
V
GS
V
GS
12
= 125 V
GS
8
2.5
= 4 V
= 5 V
= 6 V
3.0
15
10
800
600
400
200
2.4
2.0
1.6
1.2
0.8
0.4
5
4
3
2
1
0
0
- 50
2
0
C
On-Resistance vs. Junction Temperature
rss
I
D
- 25
= 3.6 A
10
V
T
V
DS
C
GS
Transfer Characteristics
T
3
0
J
= 125 °C
C
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
iss
25
Capacitance
20
T
C
C
= 25 °C
50
4
Vishay Siliconix
oss
V
30
GS
75
Si7620DN
= 10 V
www.vishay.com
100
5
T
40
C
= - 55 °C
125
150
50
6
3