NDB6060L Fairchild Semiconductor, NDB6060L Datasheet - Page 4

• Manufacturer Part Number: NDB6060L
• Description: MOSFET N-CH 60V 48A TO-263AB
• Manufacturer: Fairchild Semiconductor
• Type: Power MOSFETr

Specifications of NDB6060L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 24A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 48A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 5V
• Input Capacitance (ciss) @ Vds: 2000pF @ 25V
• Power - Max: 100W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.02 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 48 A
• Power Dissipation: 100000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.02Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±16V
• Operating Temp Range: -65C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: D2PAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDB6060LTR

Typical Electrical Characteristics
6 0
5 0
4 0
3 0
2 0
1 0
0
1 0 0
1
1.75
1.25
0.75
8 0
6 0
4 0
2 0
1.5
0.5
Figure 3. On-Resistance Variation
Figure 5. Transfer Characteristics.
0
2
1
0
-50
V
DS
Figure 1. On-Region Characteristics.
V
I
D
GS
= 10V
with Temperature.
= 24A
-25
= 5V
V
1
2
GS
V
GS
0
V
, GATE TO SOURCE VOLTAGE (V)
DS
T , JUNCTION TEMPERATURE (°C)
= 10V
J
, DRAIN-SOURCE VOLTAGE (V)
2 5
2
6.0
5 0
3
T = -55°C
J
5.0
7 5
4.5
3
1 0 0
4.0
25°C
4
3.5
1 2 5
4
3.0
125°C
1 5 0
2.5
1 7 5
5
5
1.3
1.2
1.1
0.9
0.8
0.7
0.6
0.5
1.8
1.6
1.4
1.2
0.8
0.6
1 .5
0 .5
1
2
1
Figure 4. On-Resistance Variation with Drain
-50
Figure 2. On-Resistance Variation with Gate
2
1
0
0
Figure 6. Gate Threshold Variation with
V
GS
-25
Current and Temperature.
Voltage and Drain Current.
V
= 5.0V
GS
Temperature.
20
= 3.0V
2 0
0
T , JUNCTION TEMPERATURE (°C)
J
T = 125°C
2 5
J
I , DRAIN CURRENT (A)
I
D
D
3.5
, DRAIN CURRENT (A)
40
4 0
5 0
4.0
7 5
25°C
60
6 0
NDP6060L Rev. D / NDB6060L Rev. E
100
4.5
I
D
-55°C
V
5.0
125
DS
= 250µA
80
8 0
5.5
= V
6.0
GS
150
1 0
1 0 0
100
175