SI4110DY-T1-GE3 Vishay, SI4110DY-T1-GE3 Datasheet - Page 6

MOSFET N-CH 80V 17.3A 8-SOIC

SI4110DY-T1-GE3

Manufacturer Part Number
SI4110DY-T1-GE3
Description
MOSFET N-CH 80V 17.3A 8-SOIC
Manufacturer
Vishay
Datasheet

Specifications of SI4110DY-T1-GE3

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
13 mOhm @ 11.7A, 10V
Drain To Source Voltage (vdss)
80V
Current - Continuous Drain (id) @ 25° C
17.3A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
53nC @ 10V
Input Capacitance (ciss) @ Vds
2205pF @ 40V
Power - Max
7.8W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.013 Ohm @ 10 V
Drain-source Breakdown Voltage
80 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
11.7 A
Power Dissipation
3600 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
17.3A
Drain Source Voltage Vds
80V
On Resistance Rds(on)
13mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
4V
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
SOIC
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4110DY-T1-GE3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4110DY-T1-GE3
Manufacturer:
Vishay/Siliconix
Quantity:
30 888
Part Number:
SI4110DY-T1-GE3
Manufacturer:
VISHAY
Quantity:
9 179
Part Number:
SI4110DY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI4110DY-T1-GE3
Quantity:
70 000
Si4110DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?68766.
www.vishay.com
6
0.001
0.01
0.01
0.1
0.1
1
1
10
10
-3
-4
0.02
0.05
0.02
0.05
0.1
0.2
0.2
0.1
Duty Cycle = 0.5
Duty Cycle = 0.5
Single Pulse
Single Pulse
10
10
-3
-2
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
10
-1
-2
New Product
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
1
-1
1
1
0
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
A
1
= P
t
S-81713-Rev. A, 04-Aug-08
2
100
DM
10
Document Number: 68766
Z
thJA
thJA
t
t
1
2
(t)
= 66 °C/W
1000
100

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