RFD14N05 Fairchild Semiconductor, RFD14N05 Datasheet - Page 2

• Manufacturer Part Number: RFD14N05
• Description: MOSFET N-CH 50V 14A I-PAK
• Manufacturer: Fairchild Semiconductor

Specifications of RFD14N05

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 20V
• Input Capacitance (ciss) @ Vds: 570pF @ 25V
• Power - Max: 48W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 14 A
• Power Dissipation: 48 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (R
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Maximum Temperature for Soldering
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
Electrical Specifications
Source to Drain Diode Specifications
NOTES:
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Source to Drain Diode Voltage (Note 2)
Diode Reverse Recovery Time
1. T
2. Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2%.
3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Derate above 25
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Capability Curve (Figure 5).
J
= 25
o
C to 150
PARAMETER
PARAMETER
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
o
C.
GS
= 20k Ω ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
T
C
T
= 25
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
V
r
Q
BV
o
t
Q
DS(ON)
Q
t
C
d(OFF)
C
GS(TH)
SYMBOL
I
R
R
R
C, Unless Otherwise Specified
I
d(ON)
t
g(TOT)
C
GSS
t
DSS
OFF
g(TH)
g(10)
OSS
ON
RSS
θ JC
θ JA
θ JA
ISS
DSS
t
t
r
f
V
t
SD
rr
I
V
V
V
V
I
V
R
(Figure 13)
V
V
V
V
(Figure 12)
TO-251 and TO-252
TO-220
D
D
GS
DS
DS
GS
DD
GS
GS
GS
DS
GS
I
I
= 250 µ A, V
= 14A, V
SD
SD
= 0.8 x Rated BV
= Rated BV
= 25V, V
= V
= ±2 0V
= 25V, I
= 25 Ω, R
= 0V to 20V
= 0V to 10V
= 0V to 2V
= 14A
= 14A, dI
DS
, I
GS
D
D
GS
GS
TEST CONDITIONS
L
TEST CONDITIONS
= 10V, (Figure 11)
≈
= 250 µ A
SD
= 1.7 Ω
DSS
14A, V
= 0V, f = 1MHz
= 0V (Figure 9)
/dt = 100A/ µ s
, V
DSS
GS
GS
J,
, V
= 0V
= 10V,
V
R
I
(Figure 13)
T
g(REF)
GS
DGR
DD
L
DSS
STG
pkg
DM
GS
AS
= 2.86 Ω
D
D
= 0V, T
L
= 40V, I
= 0.4mA
C
Refer to Peak Current Curve
RFD14N05, RFD14N05SM,
D
= 150
= 14A,
Refer to UIS Curve
o
C
RFP14N05
-55 to 175
MIN
0.32
± 20
300
260
-
-
RFD14N05, RFD14N05SM, RFP14N05 Rev. B
50
50
14
48
MIN
50
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
TYP
570
185
-
-
14
26
45
17
50
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX
0.100
3.125
MAX
± 100
125
1.5
250
100
100
1.5
25
60
40
25
80
4
-
-
-
-
-
-
-
-
UNITS
W/
o
o
o
W
V
V
V
A
C
C
C
o
UNITS
UNITS
o
o
o
C
C/W
C/W
C/W
nC
nC
nC
µ A
µ A
nA
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
Ω
V
V
V