RFD14N05L Fairchild Semiconductor, RFD14N05L Datasheet - Page 4
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RFD14N05L
Manufacturer Part Number
RFD14N05L
Description
MOSFET N-CH 50V 14A I-PAK
Manufacturer
Fairchild Semiconductor
Type
Power MOSFETr
Datasheet
1.RFD14N05L.pdf
(8 pages)
Specifications of RFD14N05L
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
100 mOhm @ 14A, 5V
Drain To Source Voltage (vdss)
50V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
40nC @ 10V
Input Capacitance (ciss) @ Vds
670pF @ 25V
Power - Max
48W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.1 Ohms
Drain-source Breakdown Voltage
50 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
14 A
Power Dissipation
48 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.1Ohm
Drain-source On-volt
50V
Gate-source Voltage (max)
±10V
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
IPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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Company
Part Number
Manufacturer
Quantity
Price
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Part Number:
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Manufacturer:
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Part Number:
RFD14N05LSM(14N05L)(BP)
Manufacturer:
ST
Quantity:
4 000
Typical Performance Curves
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
©2010 Fairchild Semiconductor Corporation
50
10
160
140
120
100
35
30
25
20
15
10
1
80
60
40
20
FIGURE 10. SWITCHING TIME vs GATE RESISTANCE
5
0
0.01
0
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
0
If R = 0
t
If R ≠ 0
t
0
AV
AV
STARTING T
V
FIGURE 8. TRANSFER CHARACTERISTICS
DD
= (L)(I
= (L/R)ln[(I
= 25V, I
AS
R
1.5
10
)/(1.3*RATED BV
GS
V
J
GS
D
AS
= 150
, GATE TO SOURCE RESISTANCE (Ω)
t
= 14A, R
AV
, GATE TO SOURCE VOLTAGE (V)
*R)/(1.3*RATED BV
, TIME IN AVALANCHE (ms)
0.1
o
C
3.0
L
20
25
-55
= 3.57Ω
o
DSS
C
o
C
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX.
V
- V
STARTING T
DD
DSS
DD
4.5
30
= 15V
)
-V
1
175
DD
Unless Otherwise Specified (Continued)
) +1]
o
J
C
= 25
6.0
40
o
t
C
t
d(ON)
t
d(OFF)
t
r
f
7.5
50
10
FIGURE 11. NORMALIZED DRAIN TO SOURCE ON
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
35
30
25
20
15
10
5
0
2.5
2.0
1.5
1.0
0.5
250
200
150
100
0
50
0
-80
V
0
2.5
GS
FIGURE 7. SATURATION CHARACTERISTICS
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX.
V
GS
I
D
= 10V
= 3.5A
= 10V, I
VOLTAGE AND DRAIN CURRENT
RESISTANCE vs JUNCTION TEMPERATURE
-40
1.5
V
DS
I
3.0
V
D
T
D
GS
J
, DRAIN TO SOURCE VOLTAGE (V)
= 7A
, JUNCTION TEMPERATURE (
= 14A
, GATE TO SOURCE VOLTAGE (V)
0
PULSE DURATION = 80µs, T
DUTY CYCLE = 0.5% MAX.
3.0
I
D
3.5
40
= 14A
V
GS
V
= 4.5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX.
GS
RFD14N05L, RFD14N05LSM Rev. B2
80
4.5
= 5V
4.0
I
D
120
= 28A
o
C)
6.0
4.5
C
V
V
= 25
V
160
GS
GS
GS
o
= 4V
= 3V
= 2.5V
C
200
7.5
5.0