FDD16AN08A0 Fairchild Semiconductor, FDD16AN08A0 Datasheet
FDD16AN08A0
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FDD16AN08A0TR
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FDD16AN08A0 Summary of contents
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... Distributed Power Architectures and VRMs • Primary Switch for 24V and 48V systems T = 25°C unless otherwise noted C Parameter 10V 10V, with C/ copper pad area systems certification. May 2002 Ratings Units Figure 135 -55 to 175 C o 1.11 C/W o 100 C C/W FDD16AN08A0 Rev. A1 ...
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... 10V 40V 50A 10V 50A 25A 50A, dI /dt = 100A 50A, dI /dt = 100A Tape Width Quantity 16mm 2500 units Min Typ Max 150 250 100 0.013 0.016 - 0.019 0.029 - 0.032 0.037 - 1874 - - 290 - - 40V DD = 50A - 9 1.0mA - FDD16AN08A0 Rev. A1 Units ...
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... Figure 2. Maximum Continuous Drain Current RECTANGULAR PULSE DURATION ( PULSE WIDTH (s) Figure 4. Peak Current Capability CURRENT LIMITED BY PACKAGE 50 75 100 125 150 CASE TEMPERATURE ( C) C Case Temperature NOTES: DUTY FACTOR PEAK FOR TEMPERATURES o ABOVE 25 C DERATE PEAK CURRENT AS FOLLOWS: 175 - 150 - FDD16AN08A0 Rev. A1 175 ...
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... Resistance vs Junction Temperature (L)(I )/(1.3*RATED DSS (L/R)ln[(I *R)/(1.3*RATED + DSS DD o STARTING 150 TIME IN AVALANCHE (ms) AV Capability = 20V V = 10V PULSE DURATION = DUTY CYCLE = 0.5% MAX DRAIN TO SOURCE VOLTAGE ( 10V, I =50A 120 160 JUNCTION TEMPERATURE ( C) J FDD16AN08A0 Rev 100 200 ...
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... D D 1.1 1.0 0.9 120 160 200 - Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature ISS Figure 14. Gate Charge Waveforms for Constant = 250 A - 120 160 JUNCTION TEMPERATURE ( 40V WAVEFORMS IN DESCENDING ORDER 50A 10A GATE CHARGE (nC) g Gate Current FDD16AN08A0 Rev. A1 200 35 ...
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... Figure 19. Switching Time Test Circuit ©2002 Fairchild Semiconductor Corporation DUT 0.01 Figure 16. Unclamped Energy Waveforms gs2 DUT g(REF) 0 Figure 18. Gate Charge Waveforms d(ON 90 DUT V GS 50% 10% 0 Figure 20. Switching Time Waveforms BV DSS g(TOT g(TH OFF t d(OFF 10% 10% 90% 50% PULSE WIDTH FDD16AN08A0 Rev 10V 90% ...
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... 0.268 + Area ©2002 Fairchild Semiconductor Corporation , and the 125 application’s ambient 100 never exceeded (EQ 0. Figure 21. Thermal Resistance vs Mounting dissipation. Pulse (EQ 33.32 + 23.84/(0.268+Area AREA, TOP COPPER AREA (in ) Pad Area FDD16AN08A0 Rev ...
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... PSPICE Electrical Model .SUBCKT FDD16AN08A0 rev March 2002 6.8e- 8.9e-10 Cin 6 8 1.8e-9 Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Dplcap 10 5 DplcapMOD Ebreak 80.00 Eds Egs Esg Evthres Evtemp GATE Lgate 1 9 4.81e-9 Ldrain 2 5 1.0e-9 Lsource 3 7 4.63e-9 RLgate 1 9 48.1 RLdrain RLsource ...
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... Fairchild Semiconductor Corporation DPLCAP 10 RSLC2 - 6 ESG 8 EVTHRES + + 19 LGATE EVTEMP 8 RGATE + RLGATE CIN S1A S2A S1B S2B EGS EDS LDRAIN 5 RLDRAIN RSLC1 51 ISCL DBREAK 50 RDRAIN 11 DBODY MWEAK EBREAK MMED + MSTRO 17 18 LSOURCE - 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT RVTHRES FDD16AN08A0 Rev. A1 DRAIN 2 SOURCE 3 ...
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... CTHERM6 2 tl 0.08 RTHERM1 th 6 0.075 RTHERM2 6 5 0.09 RTHERM3 5 4 0.1 RTHERM4 4 3 0.15 RTHERM5 3 2 0.2 RTHERM6 2 tl 0.25 SABER Thermal Model SABER thermal model FDD16AN08A0T template thermal_model th tl thermal_c th ctherm.ctherm1 0.002 ctherm.ctherm2 0.004 ctherm.ctherm3 0.006 ctherm.ctherm4 0.01 ctherm.ctherm5 0.03 ctherm ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ HiSeC™ ...