FDMS6681Z Fairchild Semiconductor, FDMS6681Z Datasheet - Page 2
![MOSFET P-CH 30V 21.1A POWER56](/photos/5/47/54749/fdms6681z_sml.jpg)
FDMS6681Z
Manufacturer Part Number
FDMS6681Z
Description
MOSFET P-CH 30V 21.1A POWER56
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDMS6681Z.pdf
(7 pages)
Specifications of FDMS6681Z
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.2 mOhm @ 22.1A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
21.1A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
241nC @ 10V
Input Capacitance (ciss) @ Vds
10380pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-PQFN, Power56
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.0035 Ohms
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
21.1 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMS6681ZTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMS6681Z
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2009 Fairchild Semiconductor Corporation
FDMS6681Z Rev.C4
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
NOTES:
1. R
2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%.
3. The diode connected between the gate and source servers only as protection against ESD. No gate overvoltage rating is implied.
BV
I
I
V
r
g
C
C
C
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
DS(on)
FS
the user's board design.
BV
GS(th)
SD
iss
oss
rss
g
g
gs
gd
rr
V
Symbol
DSS
T
T
JA
GS(th)
DSS
J
J
is determined with the device mounted on a 1 in
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
2
T
a. 50 °C/W when mounted on
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
J
a 1 in
= 25 °C unless otherwise noted
2
pad of 2 oz copper.
V
V
V
V
I
I
V
V
V
I
V
V
V
V
V
f = 1 MHz
V
V
I
D
D
D
F
DS
GS
GS
GS
GS
GS
DD
DS
DD
GS
GS
GS
GS
GS
= -22.1 A, di/dt = 100 A/ s
= -250 A, V
= -250 A, referenced to 25 °C
= -250 A, referenced to 25 °C
= 0 V to -10 V
= 0 V to -5 V
= -24 V, V
= ±25 V, V
= V
= -10 V, I
= -4.5 V, I
= -10 V, I
= -10 V, I
= -15 V, V
= -15 V, I
= -10 V, R
= 0 V, I
= 0 V, I
DS
2
, I
Test Conditions
S
S
D
= -2.1 A
= -22.1 A
D
D
D
D
GS
GS
GEN
= -250 A
D
GS
DS
= -22.1 A,
= -22.1 A
= -22.1 A, T
= -22.1 A
= -15.7 A
= 0 V
= 0 V,
= 0 V
= 0 V
= 6
V
I
D
DD
= -22.1 A
= -15 V,
(Note 2)
(Note 2)
J
= 125 °C
JC
b. 125 °C/W when mounted on a
is guaranteed by design while R
minimum pad of 2 oz copper.
Min
-30
-1
1540
1345
7803
0.68
0.79
-1.7
Typ
143
2.7
4.0
3.9
260
197
172
44
39
20
-7
15
38
97
22
46
10380
2050
2020
1.25
Max
1.2
3.2
5.0
5.0
416
316
241
136
±10
71
63
-3
24
61
CA
-1
www.fairchildsemi.com
is determined by
mV/°C
mV/°C
Units
m
nC
pF
pF
pF
ns
nC
nC
nC
nC
ns
V
V
V
S
ns
ns
ns
V
A
A