FDMS6681Z Fairchild Semiconductor, FDMS6681Z Datasheet - Page 2

• Manufacturer Part Number: FDMS6681Z
• Description: MOSFET P-CH 30V 21.1A POWER56
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMS6681Z

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.2 mOhm @ 22.1A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 21.1A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 241nC @ 10V
• Input Capacitance (ciss) @ Vds: 10380pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-PQFN, Power56
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.0035 Ohms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 21.1 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMS6681ZTR

©2009 Fairchild Semiconductor Corporation
FDMS6681Z Rev.C4
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
NOTES:
1. R
2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%.
3. The diode connected between the gate and source servers only as protection against ESD. No gate overvoltage rating is implied.
BV
I
I
V
r
g
C
C
C
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
DS(on)
FS
the user's board design.
BV
GS(th)
SD
iss
oss
rss
g
g
gs
gd
rr
V
Symbol
DSS
T
T
JA
GS(th)
DSS
J
J
is determined with the device mounted on a 1 in
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
2
T
a. 50 °C/W when mounted on
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
J
a 1 in
= 25 °C unless otherwise noted
2
pad of 2 oz copper.
V
V
V
V
I
I
V
V
V
I
V
V
V
V
V
f = 1 MHz
V
V
I
D
D
D
F
DS
GS
GS
GS
GS
GS
DD
DS
DD
GS
GS
GS
GS
GS
= -22.1 A, di/dt = 100 A/ s
= -250 A, V
= -250 A, referenced to 25 °C
= -250 A, referenced to 25 °C
= 0 V to -10 V
= 0 V to -5 V
= -24 V, V
= ±25 V, V
= V
= -10 V, I
= -4.5 V, I
= -10 V, I
= -10 V, I
= -15 V, V
= -15 V, I
= -10 V, R
= 0 V, I
= 0 V, I
DS
2
, I
Test Conditions
S
S
D
= -2.1 A
= -22.1 A
D
D
D
D
GS
GS
GEN
= -250 A
D
GS
DS
= -22.1 A,
= -22.1 A
= -22.1 A, T
= -22.1 A
= -15.7 A
= 0 V
= 0 V,
= 0 V
= 0 V
= 6
V
I
D
DD
= -22.1 A
= -15 V,
(Note 2)
(Note 2)
J
= 125 °C
JC
b. 125 °C/W when mounted on a
is guaranteed by design while R
minimum pad of 2 oz copper.
Min
-30
-1
1540
1345
7803
0.68
0.79
-1.7
Typ
143
2.7
4.0
3.9
260
197
172
44
39
20
-7
15
38
97
22
46
10380
2050
2020
1.25
Max
1.2
3.2
5.0
5.0
416
316
241
136
±10
71
63
-3
24
61
CA
-1
www.fairchildsemi.com
is determined by
mV/°C
mV/°C
Units
m
nC
pF
pF
pF
ns
nC
nC
nC
nC
ns
V
V
V
S
ns
ns
ns
V
A
A