SI4630DY-T1-E3 Vishay, SI4630DY-T1-E3 Datasheet

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... Top View Ordering Information: Si4630DY-T1-E3 (Lead (Pb)-free) Si4630DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy Maximum Power Dissipation ...

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... Si4630DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

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... Total Gate Charge (nC) g Gate Charge Document Number: 73685 S09-0138-Rev. C, 02-Feb-09 1.5 2.0 2 110 Si4630DY Vishay Siliconix 1.2 1.0 0.8 0.6 25 °C 0.4 0 125 °C C 0.0 0.0 0.6 1.2 1 Gate-to-Source Voltage (V) GS Transfer Characteristics 8500 C iss 6800 5100 3400 1700 C oss ...

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... Si4630DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100.000 10.000 150 °C 1.000 0.100 0.010 0.001 0.00 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0 250 µ 0.1 - 0.4 - 0 Temperature (°C) J Threshold Voltage Limited by R www.vishay.com 4 0.010 ...

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... Package Limited 100 T - Case Temperature (°C) C Current Derating* 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si4630DY Vishay Siliconix 125 150 2.0 1.6 1.2 0.8 0.4 0 100 T - Ambient Temperature (°C) A Power, Junction-to-Ambient www.vishay.com 125 ...

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... Si4630DY Vishay Siliconix TYPICAL CHARACTERISTICS 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

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