SI7892BDP-T1-GE3 Vishay, SI7892BDP-T1-GE3 Datasheet
SI7892BDP-T1-GE3
Specifications of SI7892BDP-T1-GE3
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SI7892BDP-T1-GE3 Summary of contents
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... Bottom View Ordering Information: Si7892BDP-T1-E3 (Lead (Pb)-free) Si7892BDP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150°C) J Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction) Avalanche Current Single Pulse Avalanche Energy ...
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... Si7892BDP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Symbol Static Gate Threshold Voltage V Temperature Coefficient DS ΔV V Temperature Coefficient GS(th) Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Input Capacitance ...
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... V - Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 73228 S-80440-Rev. C, 03-Mar- 22.2 29.6 37 °C J 0.8 1.0 1.2 Si7892BDP Vishay Siliconix 4500 C iss 4000 3500 3000 2500 2000 1500 C oss 1000 C rss 500 Drain-to-Source Voltage (V) DS Capacitance 1.6 ...
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... Si7892BDP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 0.4 0.2 0.0 - 0.2 - 0.4 - 0.6 - 0 Temperature (°C) J Threshold Voltage Limited Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 250 µ 100 125 150 100 * DS(on 0 ° ...
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... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73228. Document Number: 73228 S-80440-Rev. C, 03-Mar- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si7892BDP Vishay Siliconix - www.vishay.com 5 ...
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