IRFD9014PBF Vishay, IRFD9014PBF Datasheet - Page 2

• Manufacturer Part Number: IRFD9014PBF
• Description: MOSFET P-CH 60V 1.1A 4-DIP
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRFD9014PBF

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 500 mOhm @ 660mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 1.1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 270pF @ 25V
• Power - Max: 1.3W
• Mounting Type: Through Hole
• Package / Case: 4-DIP (0.300", 7.62mm)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Resistance Drain-source Rds (on): 0.5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.1 A
• Power Dissipation: 1300 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: -1.1A
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 500mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.5Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 4
• Package Type: HexDIP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFD9014PBF

IRFD9014, SiHFD9014
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
= 25 °C, unless otherwise noted)
a
SYMBOL
SYMBOL
V
R
V
t
t
C
I
I
C
R
V
DS(on)
C
Q
Q
V
GS(th)
d(off)
I
GSS
DSS
d(on)
Q
DS
g
Q
L
t
L
SM
t
I
t
t
on
DS
oss
SD
thJA
iss
rss
S
gs
gd
rr
fs
r
f
D
S
g
rr
/T
J
T
V
V
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
J
GS
GS
V
= 25 °C, I
R
T
DS
Intrinsic turn-on time is negligible (turn-on is dominated by L
J
Reference to 25 °C, I
= - 10 V
= - 10 V
g
= 25 °C, I
= 24 , R
= - 48 V, V
V
V
V
DS
V
V
DD
f = 1.0 MHz, see fig. 5
DS
TYP.
GS
TEST CONDITIONS
DS
= - 25 V, I
-
= - 30 V, I
F
= V
= 0 V, I
= - 60 V, V
= - 6.7 A, dI/dt = 100 A/μs
V
V
V
GS
DS
S
D
GS
I
D
GS
= - 1.1 A, V
GS
= 4.0 , see fig. 10
, I
= - 25 V,
= - 6.7 A, V
= ± 20 V
= 0 V,
see fig. 6 and 13
D
D
= 0 V, T
D
= - 250 μA
= - 250 μA
I
D
D
= - 0.66 A
GS
= - 6.7 A,
= - 0.66 A
D
= 0 V
= - 1 mA
J
GS
= 150 °C
DS
G
G
= 0 V
= - 48 V,
b
b
MAX.
D
S
b
b
b
120
D
S
b
MIN.
- 2.0
0.70
- 60
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S10-2463-Rev. C, 08-Nov-10
Document Number: 91136
- 0.060
0.096
TYP.
270
170
4.0
6.0
31
11
63
10
31
80
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
- 500
- 4.0
-100
0.50
- 1.1
- 8.8
- 5.5
0.19
160
3.8
5.1
S
12
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
nC
nH
μC
nA
μA
pF
ns
ns

S
A
V
V
V