ZXM66P03N8TA Diodes Zetex, ZXM66P03N8TA Datasheet - Page 3

• Manufacturer Part Number: ZXM66P03N8TA
• Description: MOSFET P-CH 30V 7.9A 8-SOIC
• Manufacturer: Diodes Zetex

Specifications of ZXM66P03N8TA

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 25 mOhm @ 5.6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.25A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 36nC @ 5V
• Input Capacitance (ciss) @ Vds: 1979pF @ 25V
• Power - Max: 1.56W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXM66P03N8TR

ISSUE 1 - JANUARY 2006
ELECTRICAL CHARACTERISTICS (at T
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State
Resistance (1)
Forward Transconductance (1)(3)
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge(3)
SYMBOL
V (BR)DSS
I DSS
I GSS
V GS(th)
R DS(on)
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g
Q g
Q gs
Q gd
V SD
t rr
Q rr
3
amb
MIN.
-1.0
-30
= 25°C unless otherwise stated).
TYP.
1979
14.4
16.3
94.6
39.6
62.5
19.6
39.9
743
279
7.6
4.9
36
35
MAX. UNIT CONDITIONS
0.025
0.035
-0.95 V
-100
-1
V
µA
nA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
ns
nC
ZXM66P03N8
I D =-250µA, V GS =0V
V DS =-24V, V GS =0V
I
V GS
V GS =-10V, I D =-5.6A
V GS =-4.5V, I D =-2.8A
V DS =-15V,I D =-5.6A
V DS =-25 V, V GS =0V,
f=1MHz
V DD =-15V, I D =-5.6A
R G =6.2Ω, V GS =-10V
V DS =-15V,V GS =-5V
I
V DS =-15V,V GS =-10V
I
T j =25°C, I S =-5.6A,
V GS =0V
T j =25°C, I F =-5.6A,
di/dt= 100A/µs
V GS =±20V, V DS =0V
D
D
D
=-5.6A
=-5.6A
S E M I C O N D U C T O R S
=-250µA, V DS =