SIE812DF-T1-E3 Vishay, SIE812DF-T1-E3 Datasheet

MOSFET N-CH 40V 60A 10-POLARPAK

SIE812DF-T1-E3

Manufacturer Part Number
SIE812DF-T1-E3
Description
MOSFET N-CH 40V 60A 10-POLARPAK
Manufacturer
Vishay
Series
TrenchFET®r
Datasheets

Specifications of SIE812DF-T1-E3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2.6 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
60A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
170nC @ 10V
Input Capacitance (ciss) @ Vds
8300pF @ 20V
Power - Max
125W
Mounting Type
Surface Mount
Package / Case
10-PolarPAK® (L)
Transistor Polarity
N Channel
Continuous Drain Current Id
60A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
3.4mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
2.3V
Configuration
Single
Resistance Drain-source Rds (on)
0.0026 Ohms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
33 A
Power Dissipation
5.2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 50 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SIE812DF-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SIE812DF-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
26 351
Part Number:
SIE812DF-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Document Number: 74337
S09-1337-Rev. B, 13-Jul-09
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Package Drawing
www.vishay.com/doc?72945
Top surface is connected to pins 1, 5, 6, and 10
Ordering Information:
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
V
required to ensure adequate bottom side solder interconnection.
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
DS
40
10
D
D
1
(V)
G
G
2
9
0.0026 at V
0.0034 at V
Top View
S
S
3
8
D
R
DS(on)
SiE812DF -T1-E3
SiE812DF-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
4
S
7
GS
GS
(Ω)
= 4.5 V
= 10 V
e
D
5
D
6
J
PolarPAK
= 150 °C)
Silicon
(Lead (Pb)-free)
Limit
163
143
N-Channel 40-V (D-S) MOSFET
6
D
5
I
D
(A)
7
Bottom View
4
Package
a
S
Limit
60
60
d, e
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
8
3
C
C
C
C
C
A
A
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C, unless otherwise noted
G
9
2
Q
g
52 nC
(Typ.)
10
D
1
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
I
AS
DS
GS
AS
D
S
D
FEATURES
APPLICATIONS
stg
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Ultra Low Thermal Resistance Using Top-
• Leadframe-Based New Encapsulated Package
• Low Q
• 100 % R
• Compliant to RoHS directive 2002/95/EC
• VRM
• DC/DC Conversion: Low-Side
• Synchronous Rectification
Definition
Exposed PolarPAK
Cooling
- Die Not Exposed
- Same Layout Regardless of Die Size
gd
/Q
g
and UIS Tested
gs
®
Gen II Power MOSFET
Ratio Helps Prevent Shoot-Through
60
163 (Silicon Limit)
a
(Package Limit)
- 55 to 150
®
4.3
5.2
3.3
Limit
33
27
Package for Double-Sided
± 20
100
125
125
60
60
260
40
50
80
b, c
b, c
b, c
b, c
b, c
a
a
G
www.vishay.com/ppg?74337
For Related Documents
N-Channel MOSFET
Vishay Siliconix
SiE812DF
D
S
www.vishay.com
Unit
mJ
°C
W
V
A
1

Related parts for SIE812DF-T1-E3

SIE812DF-T1-E3 Summary of contents

Page 1

... Top View Top surface is connected to pins and 10 Ordering Information: SiE812DF -T1-E3 (Lead (Pb)-free) SiE812DF-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current ...

Page 2

... SiE812DF Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a, b Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain Top Maximum Junction-to-Case (Source) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 68 °C/W. c. Measured at source pin (on the side of the package). SPECIFICATIONS °C, unless otherwise noted ...

Page 3

... On-Resistance vs. Drain Current and Gate Voltage Total Gate Charge (nC) g Gate Charge Document Number: 74337 S09-1337-Rev. B, 13-Jul- 0.4 0.5 10 000 8000 6000 4000 2000 80 100 = 100 120 SiE812DF Vishay Siliconix 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss Drain-to-Source Voltage (V) DS Capacitance 1 ...

Page 4

... SiE812DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 2.8 2 250 µA D 2.4 2.2 2.0 1.8 1.6 1.4 1 Temperature (°C) J Threshold Voltage www.vishay.com 4 0.0050 0.0045 0.0040 0.0035 0.0030 ° ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74337 S09-1337-Rev. B, 13-Jul-09 140 120 100 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) SiE812DF Vishay Siliconix 100 125 T - Case Temperature (° ...

Page 6

... SiE812DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top Duty Cycle = 0.5 0.2 0.1 0.1 ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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