SI4472DY-T1-E3 Vishay, SI4472DY-T1-E3 Datasheet
SI4472DY-T1-E3
Specifications of SI4472DY-T1-E3
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SI4472DY-T1-E3 Summary of contents
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... SO Top View Ordering Information: Si4472DY-T1-E3 (Lead (Pb)-free) Si4472DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy ...
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... Si4472DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...
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... Total Gate Charge (nC) g Gate Charge Document Number: 74283 S09-0138-Rev. B, 02-Feb- thru 100 Si4472DY Vishay Siliconix 1.2 0 125 ° ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics 2000 C iss 1600 1200 800 400 C oss C rss Drain-to-Source Voltage (V) DS Capacitance 2 ...
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... Si4472DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 150 ° 0.1 0.01 0.001 0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 1.0 0.5 0 0.5 - 1 Temperature ( C) J Threshold Voltage www.vishay.com °C J 0.8 1 1.2 75 100 125 150 100 Limited by R ...
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... S09-0138-Rev. B, 02-Feb- 100 T - Case Temperature (°C) C Current Derating* 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si4472DY Vishay Siliconix 125 150 2.0 1.6 1.2 0.8 0.4 0 100 T - Ambient Temperature (°C) A Power, Junction-to-Ambient www.vishay.com 125 ...
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... Si4472DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...