FDPF10N50FT Fairchild Semiconductor, FDPF10N50FT Datasheet - Page 4
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FDPF10N50FT
Manufacturer Part Number
FDPF10N50FT
Description
MOSFET N-CH 500V 9A TO-220F
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet
1.FDPF10N50FT.pdf
(9 pages)
Specifications of FDPF10N50FT
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
850 mOhm @ 4.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
24nC @ 10V
Input Capacitance (ciss) @ Vds
1170pF @ 25V
Power - Max
42W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.85 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
9 A
Power Dissipation
125000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDPF10N50FT
Manufacturer:
Fairchild Semiconductor
Quantity:
297 950
Company:
Part Number:
FDPF10N50FT
Manufacturer:
FAIRCHILD
Quantity:
852
Company:
Part Number:
FDPF10N50FT
Manufacturer:
Fairchi/ON
Quantity:
17 407
Part Number:
FDPF10N50FT
Manufacturer:
ON/安森美
Quantity:
20 000
FDP10N50F / FDPF10N50FT Rev. A
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Drain Current
1.2
1.1
1.0
0.9
0.8
10
-100
8
6
4
2
0
25
-50
50
T
vs. Temperature
vs. Case Temperature
T
J
C
, Junction Temperature
, Case Temperature
0
0.005
0.01
75
Figure 10. Transient Thermal Response Curve - FDPF10N50FT
0.1
1
5
10
50
0.05
0.5
0.2
0.02
0.1
0.01
Single pulse
-5
100
100
[
o
10
*Notes:
C
[
1. V
2. I
]
-4
o
C
125
D
150
GS
]
= 250
= 0V
μ
10
A
200
150
Rectangular Pulse Duration [sec]
-3
(Continued)
10
-2
0.01
4
0.1
50
10
10
1
Figure 8. Maximum Safe Operating Area
1
-1
Operation in This Area
is Limited by R
*Notes:
P
1. Z
2. Duty Factor, D= t
3. T
DM
V
1
θ
JM
DS
JC
- FDPF10N50FT
, Drain-Source Voltage [V]
- T
(t) = 3.0
10
DS(on)
C
*Notes:
t
1
= P
1. T
2. T
3. Single Pulse
t
2
o
DM
10
C
J
C/W Max.
= 150
= 25
* Z
DC
1
θ
/t
JC
o
2
o
C
C
(t)
10ms
100
10
1ms
2
100
μ
s
20
μ
s
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