IRFU220PBF Vishay, IRFU220PBF Datasheet

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IRFU220PBF

Manufacturer Part Number
IRFU220PBF
Description
MOSFET N-CH 200V 4.8A I-PAK
Manufacturer
Vishay
Datasheet

Specifications of IRFU220PBF

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
800 mOhm @ 2.9A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
4.8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 10V
Input Capacitance (ciss) @ Vds
260pF @ 25V
Power - Max
2.5W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.8 Ohm @ 10 V
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4.8 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
4.8A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
800mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFU220PBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFU220PBF
Quantity:
1 820
Company:
Part Number:
IRFU220PBF
Quantity:
1 820
Company:
Part Number:
IRFU220PBF
Quantity:
25 000
Company:
Part Number:
IRFU220PBF
Quantity:
84 000
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91270
S10-1122-Rev. C, 10-May-10
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
(TO-252)
SD
D
DD
(Max.) (nC)
DPAK
(nC)
(V)
(nC)
≤ 5.2 A, dI/dt ≤ 95 A/μs, V
= 50 V, starting T
(Ω)
G
S
D
(TO-251)
IPAK
a
J
= 25 °C, L = 14 mH, R
G
c
D S
a
a
DD
b
V
≤ V
GS
e
DPAK (TO-252)
SiHFR220-GE3
IRFR220PbF
SiHFR220-E3
IRFR220
SiHFR220
DS
= 10 V
G
, T
N-Channel MOSFET
J
e
≤ 150 °C.
Single
200
3.0
7.9
14
g
= 25 Ω, I
C
D
S
= 25 °C, unless otherwise noted
Power MOSFET
V
IRFR220, IRFU220, SiHFR220, SiHFU220
0.80
GS
DPAK (TO-252)
SiHFR220TRL-GE3
IRFR220TRLPbF
SiHFR220TL-E3
IRFR220TRL
SiHFR220TL
AS
at 10 V
= 4.8 A (see fig. 12).
T
T
C
A
for 10 s
= 25 °C
= 25 °C
T
T
a
a
C
C
= 100 °C
= 25 °C
a
FEATURES
• Halogen-free According to IEC 61249-2-21
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR220, SiHFR220)
• Straight Lead (IRFU220, SiHFU220)
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surcace mount applications.
a
Definition
DPAK (TO-252)
-
IRFR220TRPbF
SiHFR220T-E3
IRFR220TR
SiHFR220T
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
, T
P
device
DM
I
AR
GS
DS
AS
AR
D
D
stg
a
a
a
a
design,
-
DPAK (TO-252)
IRFR220TRRPbF
SiHFR220TR-E3
IRFR220TRR
SiHFR220TR
- 55 to + 150
LIMIT
0.020
260
± 20
0.33
200
230
4.8
3.0
4.8
4.2
2.5
5.0
19
42
low
Vishay Siliconix
d
a
a
a
on-resistance
a
IPAK (TO-251)
SiHFU220-GE3
IRFU220PbF
SiHFU220-E3
IRFU220
SiHFU220
www.vishay.com
UNIT
W/°C
V/ns
mJ
mJ
°C
W
V
A
A
and
1

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IRFU220PBF Summary of contents

Page 1

... 100 ° ° °C A for Ω 4.8 A (see fig. 12 ≤ 150 °C. J Vishay Siliconix device design, low on-resistance DPAK (TO-252) IPAK (TO-251) SiHFU220-GE3 - a a IRFU220PbF IRFR220TRRPbF a a SiHFU220-E3 SiHFR220TR- IRFU220 IRFR220TRR a a SiHFU220 SiHFR220TR SYMBOL LIMIT 200 V DS ± 4 3 0.33 ...

Page 2

... IRFR220, IRFU220, SiHFR220, SiHFU220 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91270 S10-1122-Rev. C, 10-May-10 IRFR220, IRFU220, SiHFR220, SiHFU220 = 25 °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C Vishay Siliconix www.vishay.com 3 ...

Page 4

... IRFR220, IRFU220, SiHFR220, SiHFU220 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91270 S10-1122-Rev. C, 10-May-10 ...

Page 5

... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91270 S10-1122-Rev. C, 10-May-10 IRFR220, IRFU220, SiHFR220, SiHFU220 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) Fig. 10b - Switching Time Waveforms Vishay Siliconix D.U. d(off) f www.vishay.com 5 ...

Page 6

... IRFR220, IRFU220, SiHFR220, SiHFU220 Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 12b - Unclamped Inductive Waveforms Current regulator Same type as D.U.T. 50 kΩ ...

Page 7

... Note Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91270. Document Number: 91270 S10-1122-Rev ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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