IRLD120PBF Vishay, IRLD120PBF Datasheet - Page 2

• Manufacturer Part Number: IRLD120PBF
• Description: MOSFET N-CH 100V 1.3A 4-DIP
• Manufacturer: Vishay

Specifications of IRLD120PBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 270 mOhm @ 780mA, 5V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1.3A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 5V
• Input Capacitance (ciss) @ Vds: 490pF @ 25V
• Power - Max: 1.3W
• Mounting Type: Through Hole
• Package / Case: 4-DIP (0.300", 7.62mm)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Resistance Drain-source Rds (on): 0.27 Ohm @ 5 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 1.3 A
• Power Dissipation: 1300 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 1.3A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 270mohm
• Rds(on) Test Voltage Vgs: 5V
• Threshold Voltage Vgs Typ: 2V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRLD120PBF

IRLD120, SiHLD120
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 µs; duty cycle  2 %.
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
a
= 25 °C, unless otherwise noted)
SYMBOL
SYMBOL
V
R
V
t
t
I
I
C
V
C
V
R
GS(th)
DS(on)
C
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
g
Q
L
t
DS
L
SM
I
t
t
on
DS
oss
t
SD
thJA
iss
rss
S
rr
gd
fs
gs
r
f
D
S
g
rr
/T
J
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
V
V
V
T
GS
GS
GS
J
R
V
= 25 °C, I
T
Intrinsic turn-on time is negligible (turn-on is dominated by L
DS
g
= 5.0 V
= 4.0 V
= 5.0 V
J
Reference to 25 °C, I
= 9.0 , R
= 25 °C, I
= 80 V, V
V
V
V
V
V
f = 1.0 MHz, see fig. 5
TYP.
DS
TEST CONDITIONS
DS
DS
GS
DD
-
= 50 V, I
= 100 V, V
F
= V
= 0 V, I
= 50 V, I
V
V
= 9.2 A, dI/dt = 100 A/µs
V
GS
DS
S
D
GS
GS
GS
I
= 1.3 A, V
D
= 5.2 , see fig. 10
= ± 10 V
, I
= 25 V,
= 0 V, T
= 0 V,
= 9.2 A, V
see fig. 6 and 13
D
D
D
D
= 250 µA
I
I
= 250 µA
= 0.78 A
D
D
GS
= 9.2 A,
= 0.78 A
= 0.65 A
D
= 0 V
J
GS
= 1 mA
= 150 °C
DS
G
G
= 0 V
b
= 80 V,
b
b
MAX.
D
S
b
b
120
D
S
b
b
MIN.
100
1.0
1.9
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S10-2465-Rev. C, 08-Nov-10
Document Number: 91310
TYP.
0.12
0.83
490
150
130
9.8
4.0
6.0
30
64
21
27
-
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
± 100
MAX.
0.27
0.38
S
250
140
2.0
3.0
7.1
1.3
2.5
1.0
25
12
10
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
)
V/°C
nA
µA
nC
nH
µC
pF
ns
ns
V
V

S
A
V